The fabrication and placement of high purity nanometals, such as one-dimensional copper (Cu) nanowires, for interconnection in integrated devices have been among the most important technological developments in recent years. Structural stability and oxidation prevention have been the key issues, and the defect control in Cu nanowire growth has been found to be important. Here, we report the synthesis of defect-free single-crystalline Cu nanowires by controlling the surface-assisted heterogeneous nucleation of Cu atomic layering on the graphite-like loop of an amorphous carbon (a-C) lacey film surface. Without a metal-catalyst or induced defects, the high quality Cu nanowires formed with high aspect ratio and high growth rate of 578 nm/s. The dynamic study of the growth of heterogeneous nanowires was conducted in situ with a high-resolution transmission electron microscope. The study illuminates the new mechanism by heterogeneous nucleation control and laying the groundwork for better understanding of heterosurface-assisted nucleation of defect-free Cu nanowire on a-C lacey film.

中文翻译：

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无缺陷铜纳米线生长的原位研究

近年来，用于集成器件互连的高纯度纳米金属（例如一维铜（Cu）纳米线）的制造和放置一直是最重要的技术发展之一。结构稳定性和防止氧化已成为关键问题，并且发现铜纳米线生长中的缺陷控制非常重要。在这里，我们报告了无缺陷单晶Cu纳米线的合成，方法是控制无定形碳（aC）花边薄膜表面的类石墨环上的Cu原子层的表面辅助异质成核。在没有金属催化剂或诱发缺陷的情况下，形成了具有高纵横比和578 nm / s的高生长速率的高质量Cu纳米线。原位进行了异质纳米线生长的动力学研究用高分辨率透射电子显微镜。该研究通过异质形核控制阐明了新的机理，并为更好地理解aC花边膜上无缺陷Cu纳米线的异质表面辅助形核奠定了基础。