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Rational Design of Perylenediimide‐Substituted Triphenylethylene to Electron Transporting Aggregation‐Induced Emission Luminogens (AIEgens) with High Mobility and Near‐Infrared Emission
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2018-01-17 , DOI: 10.1002/adfm.201705609
Zheng Zhao 1, 2 , Simin Gao 3 , Xiaoyan Zheng 2 , Pengfei Zhang 2 , Wenting Wu 3 , Ryan T. K. Kwok 2 , Yu Xiong 1 , Nelson L. C. Leung 2 , Yuncong Chen 2 , Xike Gao 3 , Jacky W. Y. Lam 2 , Ben Zhong Tang 1, 2, 4
Affiliation  

Organic materials with both high electron mobility and strong solid‐state emission are rare although for their importance to advanced organic optoelectronics. In this paper, triphenylethylenes with varying number of perylenediimide (PDI) unit (TriPE‐nPDIs, n = 1−3) are synthesized and their optical and charge‐transporting properties are systematically investigated. All the molecules exhibit strong solid‐stated near infrared (NIR) emission and some of them exhibit aggregation‐enhanced emission characteristics. Organic field‐effect transistors (OFETs) using TriPE‐nPDIs are fabricated. TriPE‐3PDI shows the best performance with maximum quantum yield of ≈30% and optimized electron mobility of over 0.01 cm2 V−1 s−1, which are the highest values among aggregation‐induced emission luminogens with NIR emissions reported so far. Photophysical property investigation and theoretical calculation indicate that the molecular conformation plays an important role on the optical properties of TriPE‐nPDI, while the result from film microstructure study reveals that the film crystallinity influences greatly their OFET device performance.

中文翻译:

ylene二酰亚胺取代的三苯乙烯对高迁移率和近红外发射的电子传输聚集诱导的发光原(AIEgens)的合理设计

具有高电子迁移率和强固态发射能力的有机材料虽然对先进的有机光电器件很重要,但却很少见。在本文中,合成了具有不同数目的per二酰亚胺(PDI)单元的三苯基乙烯(TriPE- n PDI,n = 1-3),并系统地研究了它们的光学和电荷传输性质。所有分子均表现出很强的固态近红外(NIR)发射,其中一些具有聚集增强的发射特性。制作了使用TriPE‐ n PDI的有机场效应晶体管(OFET)。TriPE-3PDI表现出最佳性能,最大量子产率约为30%,优化的电子迁移率超过0.01 cm 2 V -1 s-1,这是迄今为止报告的具有NIR排放的聚集诱导排放发光剂中的最高值。光物理性质的研究和理论计算表明,分子构象对TriPE- n PDI的光学性质起着重要作用,而薄膜微结构研究的结果表明,薄膜的结晶度极大地影响了它们的OFET器件性能。
更新日期:2018-01-17
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