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Novel Approach for Fabricating Transparent and Conducting SWCNTs/ITO Thin Films for Optoelectronic Applications
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2018-01-24 00:00:00 , DOI: 10.1021/acs.jpcc.7b10977 Hatem Taha 1, 2 , Zhong-Tao Jiang 1 , Chun-Yang Yin 3 , David J. Henry 4 , Xiaoli Zhao 5 , Geoffrey Trotter 1, 6 , Amun Amri 7
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2018-01-24 00:00:00 , DOI: 10.1021/acs.jpcc.7b10977 Hatem Taha 1, 2 , Zhong-Tao Jiang 1 , Chun-Yang Yin 3 , David J. Henry 4 , Xiaoli Zhao 5 , Geoffrey Trotter 1, 6 , Amun Amri 7
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Single-walled carbon nanotubes (SWCNTs) incorporated in indium tin oxide (ITO) were developed to fabricate transparent conductive thin films via a sol–gel spin coating technique. The fabricated thin films were annealed at 350 °C. The effects of incorporating SWCNTs and varying film thickness on crystal structure were systematically investigated by X-ray diffraction (XRD), Raman shift, surface elemental compositions, surface topography and roughness, optoelectronic characteristics, and mechanical properties. XRD results confirmed the body-centered cubic structure of indium oxide polycrystalline phase, indicating that the structural properties of the ITO films were not significantly altered by incorporating CNTs. The presence of CNTs in the ITO matrix was confirmed by analyses of Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and energy dispersive X-ray spectroscopy (EDX). FESEM images revealed the formation of SWCNTs/ITO nanoparticles, and the average crystallite size increased along with increasing film thickness. Electrical characteristics also improved as the film thickness increased. The lowest electrical resistivity (4.6 × 10–4 Ω cm), as well as the highest carrier concentration (3.3 × 1020 cm–3) and carrier mobility (41 cm2/V s) were achieved from the 320 nm thick film. However, the optical transparency decreased from 91 to 87.5% as the film thickness increased from 150 to 320 nm. The hardness and Young’s modulus of the prepared samples improved, with the increase of SWCNTs doping level, and achieved the maximum values of 28 and 306 GPa, respectively.
中文翻译：
制造用于光电应用的透明导电SWCNTs / ITO薄膜的新方法
掺入氧化铟锡（ITO）的单壁碳纳米管（SWCNT）是通过溶胶-凝胶旋涂技术制造的，用于制造透明导电薄膜。将制成的薄膜在350°C退火。通过X射线衍射（XRD），拉曼位移，表面元素组成，表面形貌和粗糙度，光电特性和机械性能，系统地研究了掺入SWCNT和改变膜厚度对晶体结构的影响。XRD结果证实了氧化铟多晶相的体心立方结构，表明ITO膜的结构特性不会因掺入CNT而显着改变。通过拉曼光谱，X射线光电子能谱（XPS），和能量色散X射线光谱仪（EDX）。FESEM图像揭示了SWCNTs / ITO纳米颗粒的形成，并且平均微晶尺寸随膜厚的增加而增加。随着膜厚度的增加，电学特性也得到改善。最低电阻率（4.6×10– 320厘米厚的膜获得了–4Ωcm ），最高载流子浓度（3.3×10 20 cm –3）和载流子迁移率（41 cm 2 / V s）。然而，随着膜厚度从150nm增加到320nm，光学透明度从91降低到87.5％。制备的样品的硬度和杨氏模量随着SWCNTs掺杂水平的提高而提高，分别达到了28 GPa和306 GPa的最大值。
更新日期：2018-01-24
中文翻译：
制造用于光电应用的透明导电SWCNTs / ITO薄膜的新方法
掺入氧化铟锡（ITO）的单壁碳纳米管（SWCNT）是通过溶胶-凝胶旋涂技术制造的，用于制造透明导电薄膜。将制成的薄膜在350°C退火。通过X射线衍射（XRD），拉曼位移，表面元素组成，表面形貌和粗糙度，光电特性和机械性能，系统地研究了掺入SWCNT和改变膜厚度对晶体结构的影响。XRD结果证实了氧化铟多晶相的体心立方结构，表明ITO膜的结构特性不会因掺入CNT而显着改变。通过拉曼光谱，X射线光电子能谱（XPS），和能量色散X射线光谱仪（EDX）。FESEM图像揭示了SWCNTs / ITO纳米颗粒的形成，并且平均微晶尺寸随膜厚的增加而增加。随着膜厚度的增加，电学特性也得到改善。最低电阻率（4.6×10– 320厘米厚的膜获得了–4Ωcm ），最高载流子浓度（3.3×10 20 cm –3）和载流子迁移率（41 cm 2 / V s）。然而，随着膜厚度从150nm增加到320nm，光学透明度从91降低到87.5％。制备的样品的硬度和杨氏模量随着SWCNTs掺杂水平的提高而提高，分别达到了28 GPa和306 GPa的最大值。
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