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Growth Pressure Controlled Nucleation Epitaxy of Pure Phase ε- and β-Ga2O3 Films on Al2O3 via Metal–Organic Chemical Vapor Deposition
Crystal Growth & Design ( IF 3.2 ) Pub Date : 2018-01-05 00:00:00 , DOI: 10.1021/acs.cgd.7b01576 Yuanpeng Chen 1 , Xiaochuan Xia 1 , Hongwei Liang 1 , Qasim Abbas 1 , Yang Liu 1 , Guotong Du 1
Crystal Growth & Design ( IF 3.2 ) Pub Date : 2018-01-05 00:00:00 , DOI: 10.1021/acs.cgd.7b01576 Yuanpeng Chen 1 , Xiaochuan Xia 1 , Hongwei Liang 1 , Qasim Abbas 1 , Yang Liu 1 , Guotong Du 1
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Pure ε- and β-phase gallium oxide (Ga2O3) films have been successfully grown on Al2O3 (001) substrate via metal–organic chemical vapor deposition (MOCVD) at a growth temperature of 500 °C. Growth pressure controlled nucleation is the dominant controlling parameter for pure phase Ga2O3 film growth. Due to the biaxial stress induced by lattice mismatch, heteroepitaxial ε-phase Ga2O3 is grown on Al2O3 by heterogeneous nucleation at low pressure. However, film growth is dominated by spherical nuclei homogeneous nucleation at a pressure higher than 100 mbar, and β-phase Ga2O3 film is grown with a mosaic surface. The optimum pressure for the growth of pure ε-Ga2O3 films with superior crystallinity is 35 mbar, whereas the pressure window for pure β-Ga2O3 growth is between 100 mbar and 400 mbar. The growth rate of β-Ga2O3 film is much lower than ε-Ga2O3 film at high pressure. On the other hand, all Ga2O3 films have shown good optical properties with a band gap of about 4.9 eV. This fundamental research will help to understand the mechanism of MOCVD growth involving high quality and pure phase ε- and β-Ga2O3 film.
中文翻译：
生长压力控制的纯相ε-成核和外延的β-Ga 2层ö 3层上Al薄膜2 ö 3通过金属有机化学气相沉积
纯的ε相和β相氧化镓（Ga 2 O 3）膜已通过金属有机化学气相沉积（MOCVD）在500°C的生长温度下成功地在Al 2 O 3（001）衬底上生长。生长压力控制的成核是纯相Ga 2 O 3膜生长的主要控制参数。由于晶格失配引起的双轴应力，异质外延ε相Ga 2 O 3在低压下通过异相成核在Al 2 O 3上生长。然而，在高于100 mbar的压力下，球状核均质成核和β相Ga占主导地位。生长具有马赛克表面的2 O 3膜。对于纯ε-Ga构成的生长的最佳压力2 ö 3膜具有优异的结晶度为35毫巴，而对于纯的β-Ga压力窗口2 ö 3生长为100毫巴和400毫巴之间。的β-Ga的生长速度2 ö 3膜比ε -镓低得多2 ö 3在高压膜。另一方面，所有Ga 2 O 3膜均显示出良好的光学性质，带隙为约4.9eV。这项基础研究将有助于了解涉及高质量和纯相ε-和β-Ga的MOCVD生长的机理2 O 3膜。
更新日期：2018-01-05
中文翻译：
生长压力控制的纯相ε-成核和外延的β-Ga 2层ö 3层上Al薄膜2 ö 3通过金属有机化学气相沉积
纯的ε相和β相氧化镓（Ga 2 O 3）膜已通过金属有机化学气相沉积（MOCVD）在500°C的生长温度下成功地在Al 2 O 3（001）衬底上生长。生长压力控制的成核是纯相Ga 2 O 3膜生长的主要控制参数。由于晶格失配引起的双轴应力，异质外延ε相Ga 2 O 3在低压下通过异相成核在Al 2 O 3上生长。然而，在高于100 mbar的压力下，球状核均质成核和β相Ga占主导地位。生长具有马赛克表面的2 O 3膜。对于纯ε-Ga构成的生长的最佳压力2 ö 3膜具有优异的结晶度为35毫巴，而对于纯的β-Ga压力窗口2 ö 3生长为100毫巴和400毫巴之间。的β-Ga的生长速度2 ö 3膜比ε -镓低得多2 ö 3在高压膜。另一方面，所有Ga 2 O 3膜均显示出良好的光学性质，带隙为约4.9eV。这项基础研究将有助于了解涉及高质量和纯相ε-和β-Ga的MOCVD生长的机理2 O 3膜。
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