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Phase-Controlled Growth of One-Dimensional Mo6Te6 Nanowires and Two-Dimensional MoTe2 Ultrathin Films Heterostructures
Nano Letters ( IF 9.6 ) Pub Date : 2017-12-26 00:00:00 , DOI: 10.1021/acs.nanolett.7b03058 Yayun Yu 1, 2 , Guang Wang 1, 2, 3 , Yuan Tan 1 , Nannan Wu 1 , Xue-Ao Zhang 1, 3 , Shiqiao Qin 1, 3
Nano Letters ( IF 9.6 ) Pub Date : 2017-12-26 00:00:00 , DOI: 10.1021/acs.nanolett.7b03058 Yayun Yu 1, 2 , Guang Wang 1, 2, 3 , Yuan Tan 1 , Nannan Wu 1 , Xue-Ao Zhang 1, 3 , Shiqiao Qin 1, 3
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Controllable synthesizing of one-dimensional–two-dimensional (1D–2D) heterostructures and tuning their atomic and electronic structures is nowadays of particular interest due to the extraordinary properties and potential applications. Here, we demonstrate the temperature-induced phase-controlled growth of 1D Mo6Te6–2D MoTe2 heterostructures via molecular beam epitaxy. In situ scanning tunneling microscopy study shows 2D ultrathin films are synthesized at low temperature range, while 1D nanowires gradually arise and dominate as temperature increasing. X-ray photoelectron spectroscopy confirms the good stoichiometry and scanning tunneling spectroscopy reveals the semimetallic property of grown Mo6Te6 nanowires. Through in situ annealing, a phase transition from 2D MoTe2 to 1D Mo6Te6 is induced, thus forming a semimetal–semiconductor junction in atomic level. An upward band bending of 2H-MoTe2 is caused by lateral hole injection from Mo6Te6. The work suggests a new route to synthesize 1D semimetallic transition metal chalcogenide nanowires, which could serve as ultrasmall conducting building blocks and enable band engineering in future 1D–2D heterostructure devices.
中文翻译：
一维Mo 6 Te 6纳米线和二维MoTe 2超薄膜异相结构的相控生长。
由于非凡的性能和潜在的应用，一维至二维（1D–2D）异质结构的可控制合成以及对其原子和电子结构的调整如今引起了人们的特别关注。在这里，我们通过分子束外延论证了温度诱导的1D Mo 6 Te 6 –2D MoTe 2异质结构的相控生长。原位扫描隧道显微镜研究表明，二维超薄膜是在低温范围内合成的，而一维纳米线则随着温度的升高而逐渐出现并占据主导地位。X射线光电子能谱证实了良好的化学计量，扫描隧道能谱揭示了生长的Mo 6 Te 6的半金属性质纳米线。通过原位退火，诱导了从2D MoTe 2到1D Mo 6 Te 6的相变，从而形成了原子级的半金属-半导体结。Mo 6 Te 6的侧向空穴注入导致2H-MoTe 2的向上带弯曲。这项工作提出了一种合成一维半金属过渡金属硫族化物纳米线的新途径，它可以用作超小型导电构件，并可以在未来的一维至二维异质结构器件中进行能带工程。
更新日期：2017-12-26
中文翻译：
一维Mo 6 Te 6纳米线和二维MoTe 2超薄膜异相结构的相控生长。
由于非凡的性能和潜在的应用，一维至二维（1D–2D）异质结构的可控制合成以及对其原子和电子结构的调整如今引起了人们的特别关注。在这里，我们通过分子束外延论证了温度诱导的1D Mo 6 Te 6 –2D MoTe 2异质结构的相控生长。原位扫描隧道显微镜研究表明，二维超薄膜是在低温范围内合成的，而一维纳米线则随着温度的升高而逐渐出现并占据主导地位。X射线光电子能谱证实了良好的化学计量，扫描隧道能谱揭示了生长的Mo 6 Te 6的半金属性质纳米线。通过原位退火，诱导了从2D MoTe 2到1D Mo 6 Te 6的相变，从而形成了原子级的半金属-半导体结。Mo 6 Te 6的侧向空穴注入导致2H-MoTe 2的向上带弯曲。这项工作提出了一种合成一维半金属过渡金属硫族化物纳米线的新途径，它可以用作超小型导电构件，并可以在未来的一维至二维异质结构器件中进行能带工程。
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