MoS2 /石墨烯异质结构的所有化学气相沉积合成和本征带隙观察
Advanced Materials
(
IF27.4
)
Pub Date : 2015-10-07, DOI: 10.1002/adma.201503342
Jianping Shi
1,
2
,
Mengxi Liu
2,
3
,
Jinxiu Wen
4
,
Xibiao Ren
5
,
Xiebo Zhou
1,
2
,
Qingqing Ji
2
,
Donglin Ma
2
,
Yu Zhang
1,
2
,
Chuanhong Jin
5
,
Huanjun Chen
4
,
Shaozhi Deng
4
,
Ningsheng Xu
4
,
Zhongfan Liu
2
,
Yanfeng Zhang
1,
2
Affiliation
Department of Materials Science and Engineering; College of Engineering; Peking University; Beijing 100871 P. R. China
Center for Nanochemistry (CNC); Beijing Science and Engineering Center for Nanocarbons; Beijing National Laboratory for Molecular Sciences; College of Chemistry and Molecular Engineering; Peking University; Beijing 100871 P. R. China
National Center for Nanoscience and Technology; Chinese Academy of Sciences; Beijing 100190 P. R. China
State Key Laboratory of Optoelectronic Materials and Technologies; Guangdong Province Key Laboratory of Display Material and Technology; School of Physics and Engineering; Sun Yat-sen University; Guangzhou 510275 P. R. China
State Key Laboratory of Silicon Materials; School of Materials Science and Engineering; Zhejiang University; Hangzhou Zhejiang 310027 P. R. China
All Chemical Vapor Deposition Synthesis and Intrinsic Bandgap Observation of MoS2/Graphene Heterostructures
A facile all‐chemical vapor deposition approach is designed, which allows both sequentially grown Gr and monolayer MoS2 in the same growth process, thus allowing the direct construction of MoS2/Gr vertical heterostructures on Au foils. A weak n‐doping effect and an intrinsic bandgap of MoS2 are obtained from MoS2/Gr/Au via scanning tunneling microscopy and spectroscopy characterization. The exciton binding energy is accurately deduced by combining photoluminescence measurements.
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