Noble metal-free NiS/P-S codoped g-C₃N₄ (PSCN) nanocomposites were fabricated by combination of thermal copolymerization using ammonium O, O- diethyl dithiophosphate as P-S precursor and ion-exchange precipitation. The optimal H₂-generation rate of NiS/PSCN is 30.5 μmol h^− 1, which is 1.9 times higher than that of NiS/pristine g-C₃N₄. The codoping of P and S into g-C₃N₄ not only enhances the light harvesting, but also promotes the charge separation. Noble metal-free NiS loaded onto PSCN serves as electron trapping centers and active sites for hydrogen evolution which further enhances the photocatalytic H₂ evolution activity of PSCN.

通过以O，O-二乙基二硫代磷酸铵为PS前驱体进行热共聚和离子交换沉淀相结合，制备了无贵金属的NiS / PS共掺杂的gC ₃ N ₄（PSCN）纳米复合材料。NiS / PSCN的最佳H ₂生成速率为30.5μmolh ^-1，是NiS /原始gC ₃ N _4的1.9倍。将P和S共掺入gC ₃ N ₄不仅增强了光的收集，而且还促进了电荷分离。负载到PSCN上的不含贵金属的NiS用作电子俘获中心和氢释放的活性位点，从而进一步增强了光催化H ₂ PSCN的进化活动。