Single-walled carbon nanotube (SWNT)-based electronics have been regarded as one of the most promising candidate technologies to replace or supplement silicon-based electronics in the future. These applications require high-density horizontally aligned SWNT arrays. During the past decade, significant efforts have been directed towards growth of high-density SWNT arrays. However, obtaining SWNT arrays with suitable density and quality still remains a big challenge. Herein, we develop a rational approach to grow SWNT arrays with ultra-high density using Trojan catalysts. The density can be as high as 130 SWNTs μm(-1). Field-effect transistors fabricated with our SWNT arrays exhibit a record drive current density of -467.09 μA μm(-1) and an on-conductance of 233.55 μS μm(-1). Radio frequency transistors fabricated on these samples exhibit high intrinsic fT and fMAX of 6.94 and 14.01 GHz, respectively. These results confirm our high-density SWNT arrays are strong candidates for applications in electronics.

中文翻译：

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使用Trojan催化剂生长高密度水平排列的SWNT阵列。

基于单壁碳纳米管（SWNT）的电子产品已被视为未来替代或补充基于硅的电子产品最有希望的候选技术之一。这些应用需要高密度水平排列的SWNT阵列。在过去的十年中，人们一直在致力于高密度SWNT阵列的增长。然而，获得具有合适的密度和质量的SWNT阵列仍然是一个巨大的挑战。在本文中，我们开发了一种合理的方法，可以使用Trojan催化剂生长具有超高密度的SWNT阵列。密度可以高达130 SWNTsμm（-1）。用我们的SWNT阵列制造的场效应晶体管的记录驱动电流密度为-467.09μAμm（-1），导通电流为233.55μSμm（-1）。在这些样品上制造的射频晶体管分别具有6.94 GHz和14.01 GHz的高固有fT和fMAX。这些结果证实了我们的高密度SWNT阵列是电子产品应用的强力候选者。