The MoS₂ carrier distribution can be controlled with the use of a dielectric environment substrate. Ferroelectric thin films are used to investigate the electrical responses at the MoS₂ layer. The MoS₂/(111)-PbTiO₃ vertical heterostructure is investigated, and the electrical responses, including piezoelectricity, are obtained using piezoresponse force microscopy. The piezoelectric response modifications obtained at the MoS₂ layer on the ferroelectric thin films are a result of the depolarizing effect. In particular, the piezoelectricity enhancement is observed at the 19-layer MoS₂ because of an induced dipole effect. By considering the polarization effects of ferroelectric thin films, the electrical responses at the MoS₂ layers can be controlled, and the interfacial carrier distribution at the interface results in different electrical performances at the MoS₂.

中文翻译：

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铁电极化控制的MoS ₂层中的虚拟平面压电响应

MoS ₂载流子分布可以通过使用介电环境衬底来控制。铁电薄膜用于研究MoS ₂层的电响应。研究了MoS ₂ /（111）-PbTiO ₃垂直异质结构，并使用压电响应力显微镜获得了包括压电性在内的电响应。在铁电薄膜上的MoS ₂层处获得的压电响应变化是去极化效应的结果。特别地，在19层MoS ₂处观察到压电性增强。因为诱发了偶极效应。通过考虑铁电薄膜的极化效应，可以控制MoS ₂层的电响应，并且界面处的界面载流子分布会导致MoS ₂处的不同电性能。