Chemical Properties of Oxidized Silicon Carbide Surfaces upon Etching in Hydrofluoric Acid,Journal of the American Chemical Society

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Chemical Properties of Oxidized Silicon Carbide Surfaces upon Etching in Hydrofluoric Acid
Journal of the American Chemical Society ( IF 14.4 ) Pub Date : 2009-11-25 , DOI: 10.1021/ja9053465
Sarit Dhar ₁ , Oliver Seitz ₁ , Mathew D. Halls ₁ , Sungho Choi ₁ , Yves J. Chabal ₁ , Leonard C. Feldman ₁

Affiliation

Hydrogen termination of oxidized silicon in hydrofluoric acid results from an etching process that is now well understood and accepted. This surface has become a standard for studies of surface science and an important component in silicon device processing for microelectronics, energy, and sensor applications. The present work shows that HF etching of oxidized silicon carbide (SiC) leads to a very different surface termination, whether the surface is carbon or silicon terminated. Specifically, the silicon carbide surfaces are hydrophilic with hydroxyl termination, resulting from the inability of HF to remove the last oxygen layer at the oxide/SiC interface. The final surface chemistry and stability critically depend on the crystal face and surface stoichiometry. These surface properties affect the ability to chemically functionalize the surface and therefore impact how SiC can be used for biomedical applications.

中文翻译：

氢氟酸蚀刻氧化碳化硅表面的化学性质

氢氟酸中氧化硅的氢终止源自现在已被充分理解和接受的蚀刻工艺。该表面已成为表面科学研究的标准，也是微电子、能源和传感器应用中硅器件加工的重要组成部分。目前的工作表明，氧化碳化硅 (SiC) 的 HF 蚀刻导致非常不同的表面终止，无论表面是碳终止还是硅终止。具体来说，碳化硅表面是亲水的，羟基终止，这是由于 HF 无法去除氧化物/SiC 界面上的最后一个氧层。最终的表面化学和稳定性主要取决于晶面和表面化学计量。

更新日期：2009-11-25

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