Activation of Surface Hydroxyl Groups by Modification of H-Terminated Si(111) Surfaces,Journal of the American Chemical Society

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Activation of Surface Hydroxyl Groups by Modification of H-Terminated Si(111) Surfaces
Journal of the American Chemical Society ( IF 14.4 ) Pub Date : 2012-05-15 , DOI: 10.1021/ja300270w
Peter Thissen ₁ , Tatiana Peixoto ₁ , Roberto C. Longo ₁ , Weina Peng ₁ , Wolf Gero Schmidt ₂ , Kyeongjae Cho ₁ , Yves J. Chabal ₁

Affiliation

Chemical functionalization of semiconductor surfaces, particularly silicon oxide, has enabled many technologically important applications (e.g., sensing, photovoltaics, and catalysis). For such processes, hydroxyl groups terminating the oxide surface constitute the primary reaction sites. However, their reactivity is often poor, hindering technologically important processes, such as surface phosphonation requiring a lengthy postprocessing annealing step at 140 °C with poor control of the bonding geometry. Using a novel oxide-free surface featuring a well-defined nanopatterned OH coverage, we demonstrate that hydroxyl groups on oxide-free silicon are more reactive than on silicon oxide. On this model surface, we show that a perfectly ordered layer of monodentate phosphonic acid molecules is chemically grafted at room temperature, and explain why it remains completely stable in aqueous environments, in contrast to phosphonates grafted on silicon oxides. This fundamental understanding of chemical activity and surface stability suggests new directions to functionalize silicon for sensors, photovoltaic devices, and nanoelectronics.

中文翻译：

通过修饰 H 封端的 Si(111) 表面来活化表面羟基

半导体表面的化学功能化，尤其是氧化硅，已经实现了许多重要的技术应用（例如，传感、光伏和催化）。对于此类过程，终止氧化物表面的羟基构成主要反应位点。然而，它们的反应性通常很差，阻碍了技术上的重要过程，例如表面膦化需要在 140°C 下进行漫长的后处理退火步骤，并且键合几何形状控制不佳。使用具有明确定义的纳米图案 OH 覆盖的新型无氧化物表面，我们证明无氧化物硅上的羟基比氧化硅上的更具反应性。在这个模型表面，我们展示了一个完美有序的单齿膦酸分子层在室温下化学接枝，并解释为什么与接枝在氧化硅上的膦酸盐相比，它在水性环境中保持完全稳定。这种对化学活性和表面稳定性的基本理解为传感器、光伏器件和纳米电子器件的硅功能化提供了新的方向。

更新日期：2012-05-15

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