Understanding of Relaxor Ferroelectric Behavior of Poly(vinylidene fluoride–trifluoroethylene–chlorotrifluoroethylene) Terpolymers,Macromolecules

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Understanding of Relaxor Ferroelectric Behavior of Poly(vinylidene fluoride–trifluoroethylene–chlorotrifluoroethylene) Terpolymers
Macromolecules ( IF 5.1 ) Pub Date : 2015-04-13 00:00:00 , DOI: 10.1021/acs.macromol.5b00185
Matthew R. Gadinski ₁ , Qi Li ₁ , Guangzu Zhang ₁ , Xiaoshan Zhang ₁ , Qing Wang ₁

Affiliation

Relaxor ferroelectric poly(vinylidene fluoride) (PVDF) based terpolymers are attracting tremendous interest because of their potential applications in advanced energy harvesting and storage devices. Fundamental understanding of the ferroelectric behaviors of poly(vinylidene fluoride) (PVDF) based terpolymers has proved elusive. Current research suggests that the existence of different hysteresis loops results from physical pinning of the ferroelectric domains by the bulky defect monomers and that the size of the defect monomer determines the ferroelectric behavior. In this study, a poly(vinylidene fluoride-ter-trifluoroethylene-ter-chlorotrifluoroethylene) random terpolymer is processed using a variety of methods and found to exhibit normal ferroelectric, single hysteresis loop (SHL), and double hysteresis loop (DHL) behaviors depending on the processing method. This indicates that the ferroelectric behavior of the terpolymer is related to not only the size of an individual defect unit but also how they are arranged within the relaxor ferroelectric phase. The results show that DHL behavior is a result of paraelectric domains that are promoted by long crystallization times, while the SHL behavior stems from a more random dispersion of these defects.

中文翻译：

对聚偏二氟乙烯-三氟乙烯-氯三氟乙烯三元共聚物的弛豫铁电行为的理解

弛豫铁电聚偏二氟乙烯（PVDF）基三元共聚物由于其在先进的能量收集和存储设备中的潜在应用而备受关注。对基于聚偏二氟乙烯（PVDF）的三元共聚物的铁电行为的基本了解已被证明难以捉摸。当前的研究表明，不同的磁滞回线的存在是由于庞大的缺陷单体对铁电畴的物理钉扎造成的，并且缺陷单体的大小决定了铁电行为。在这项研究中，聚（偏二氟之三-trifluoroethylene-之三-氯三氟乙烯）无规三元共聚物使用多种方法进行处理，并且根据处理方法的不同，它们表现出正常的铁电性，单磁滞回线（SHL）和双磁滞回线（DHL）行为。这表明三元共聚物的铁电行为不仅与单个缺陷单元的大小有关，而且还与它们在弛豫铁电相中的排列方式有关。结果表明，DHL行为是顺电畴的结果，长结晶时间促进了该现象，而SHL行为则是由于这些缺陷的随机分布所致。

更新日期：2015-04-13

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