Synthesis of Vertical MoO2/MoS2 Core–Shell Structures on an Amorphous Substrate via Chemical Vapor Deposition,The Journal of Physical Chemistry C

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Synthesis of Vertical MoO2/MoS2 Core–Shell Structures on an Amorphous Substrate via Chemical Vapor Deposition
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2017-12-05 00:00:00 , DOI: 10.1021/acs.jpcc.7b08171
Taejin Park _{1,

2} , Mirine Leem ₃ , Hyangsook Lee _{3,

4} , Wonsik Ahn ₃ , Hoijoon Kim ₃ , Jinbum Kim _{1,

2} , Eunha Lee ₄ , Yong-Hoon Kim _{3,

5} , Hyoungsub Kim _{3,

5}

Affiliation

Vertical MoO₂/MoS₂ core–shell structures were synthesized on an amorphous surface (SiO₂) by chemical vapor deposition at a high heating rate using a configuration in which the vapor phase was confined. The confined reaction configuration was achieved by partially covering the MoO₃-containing boat with a substrate, which allowed rapid buildup of the partially reduced MoO_3–x crystals in an early stage (below 680 °C). Rapid temperature ramping to 780 °C enabled spontaneous transition of the reaction environment from sulfur-poor to sulfur-rich, which induced a sequential phase transition from MoO_3–x to intermediate MoO₂ and finally to MoO₂/MoS₂ core–shell structures. The orthorhombic crystal structure of MoO_3–x contributed to the formation of vertical crystals on the amorphous substrate, whereas the nonvolatility of the subsequently formed MoO₂ enabled layer-by-layer sulfurization to form MoS₂ on the oxide surface with minimal resublimation loss of MoO₂. By adjustment of the sulfurization temperature and time, excellent control over the thickness of the MoS₂ shell was achieved through the proposed synthesis method.

中文翻译：

通过化学气相沉积法在非晶基底上合成垂直MoO ₂ / MoS ₂核-壳结构

垂直MoO ₂ / MoS ₂核-壳结构是在无定形表面（SiO ₂）上通过化学汽相淀积在高加热速率下使用受限的气相结构合成的。通过用基材部分覆盖含MoO ₃的舟皿来实现受限的反应构型，从而可以在早期阶段（低于680°C）快速沉积部分还原的MoO _{3– x}晶体。快速升温至780°C，使反应环境从贫硫到富硫自发转变，从而引发了从MoO _{3– x}到中间MoO ₂的连续相变最后是MoO ₂ / MoS ₂核-壳结构。MoO _{3- x}的正交晶体结构有助于在非晶态衬底上形成垂直晶体，而随后形成的MoO ₂的非易失性则使得层状硫化能够在氧化物表面上形成MoS ₂，并使Cb的再升华损失最小。 MoO ₂。通过调节硫化温度和时间，通过提出的合成方法可以很好地控制MoS ₂壳的厚度。

更新日期：2017-12-05

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