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Anisotropic Etching of Hexagonal Boron Nitride and Graphene: Question of Edge Terminations
Nano Letters ( IF 9.6 ) Pub Date : 2017-11-21 00:00:00 , DOI: 10.1021/acs.nanolett.7b02841 Yijing Y. Stehle 1 , Xiahan Sang 1 , Raymond R. Unocic 1 , Dmitry Voylov 2 , Roderick K. Jackson 3 , Sergei Smirnov 4 , Ivan Vlassiouk 1
Nano Letters ( IF 9.6 ) Pub Date : 2017-11-21 00:00:00 , DOI: 10.1021/acs.nanolett.7b02841 Yijing Y. Stehle 1 , Xiahan Sang 1 , Raymond R. Unocic 1 , Dmitry Voylov 2 , Roderick K. Jackson 3 , Sergei Smirnov 4 , Ivan Vlassiouk 1
Affiliation
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Chemical vapor deposition (CVD) has been established as the most effective way to grow large area two-dimensional materials. Direct study of the etching process can reveal subtleties of this competing with the growth reaction and thus provide the necessary details of the overall growth mechanism. Here we investigate hydrogen-induced etching of hBN and graphene and compare the results with the classical kinetic Wulff construction model. Formation of the anisotropically etched holes in the center of hBN and graphene single crystals was observed along with the changes in the crystals’ circumference. We show that the edges of triangular holes in hBN crystals formed at regular etching conditions are parallel to B-terminated zigzags, opposite to the N-terminated zigzag edges of hBN triangular crystals. The morphology of the etched hBN holes is affected by a disbalance of the B/N ratio upon etching and can be shifted toward the anticipated from the Wulff model N-terminated zigzag by etching in a nitrogen buffer gas instead of a typical argon. For graphene, etched hexagonal holes are terminated by zigzag, while the crystal circumference is gradually changing from a pure zigzag to a slanted angle resulting in dodecagons.
中文翻译：
六方氮化硼和石墨烯的各向异性蚀刻：边缘终止的问题
化学气相沉积（CVD）已被确立为生长大面积二维材料的最有效方法。对蚀刻工艺的直接研究可以揭示这种与生长反应竞争的微妙之处，从而提供整个生长机理的必要细节。在这里，我们研究氢诱导的hBN和石墨烯的蚀刻，并将结果与经典的动力学Wulff构建模型进行比较。观察到在hBN和石墨烯单晶中心的各向异性腐蚀孔的形成以及晶体周长的变化。我们表明，在常规刻蚀条件下形成的hBN晶体中的三角形孔的边缘与B终止的之字形平行，与hBN三角晶体的N终止的之字形边缘相反。蚀刻后的hBN孔的形貌受蚀刻时B / N比的不平衡影响，并且可以通过在氮气缓冲气体（而不是典型的氩气）中进行蚀刻而移向Wulff模型N端的之字形所预期的状态。对于石墨烯，蚀刻的六边形孔以锯齿形终止，而晶体周长逐渐从纯锯齿形变为倾斜角，从而形成十二边形。
更新日期：2017-11-21
中文翻译：
六方氮化硼和石墨烯的各向异性蚀刻：边缘终止的问题
化学气相沉积（CVD）已被确立为生长大面积二维材料的最有效方法。对蚀刻工艺的直接研究可以揭示这种与生长反应竞争的微妙之处，从而提供整个生长机理的必要细节。在这里，我们研究氢诱导的hBN和石墨烯的蚀刻，并将结果与经典的动力学Wulff构建模型进行比较。观察到在hBN和石墨烯单晶中心的各向异性腐蚀孔的形成以及晶体周长的变化。我们表明，在常规刻蚀条件下形成的hBN晶体中的三角形孔的边缘与B终止的之字形平行，与hBN三角晶体的N终止的之字形边缘相反。蚀刻后的hBN孔的形貌受蚀刻时B / N比的不平衡影响，并且可以通过在氮气缓冲气体（而不是典型的氩气）中进行蚀刻而移向Wulff模型N端的之字形所预期的状态。对于石墨烯，蚀刻的六边形孔以锯齿形终止，而晶体周长逐渐从纯锯齿形变为倾斜角，从而形成十二边形。
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