High-Pressure Band-Gap Engineering in Lead-Free Cs2AgBiBr6 Double Perovskite,Angewandte Chemie International Edition

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High-Pressure Band-Gap Engineering in Lead-Free Cs2AgBiBr6 Double Perovskite
Angewandte Chemie International Edition ( IF 16.1 ) Pub Date : 2017-11-15 05:40:39 , DOI: 10.1002/anie.201708684
Qian Li _{1,

2} , Yonggang Wang ₃ , Weicheng Pan ₄ , Wenge Yang ₃ , Bo Zou ₅ , Jiang Tang ₄ , Zewei Quan ₁

Affiliation

High pressure is adopted to modulate the crystal structure and engineer the band gap of the Cs₂AgBiBr₆ double perovskite. A 22.3 % band gap narrowing is achieved for the inorganic photovoltaic double perovskite. The narrowed band gap is partially retainable after releasing the pressure, promoting its optoelectronic applications.

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