当前位置：
X-MOL 学术
›
ACS Appl. Mater. Interfaces
›
论文详情
Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
Highly Uniform Atomic Layer-Deposited MoS2@3D-Ni-Foam: A Novel Approach To Prepare an Electrode for Supercapacitors
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2017-11-13 00:00:00 , DOI: 10.1021/acsami.7b12248 Dip K. Nandi , Sumanta Sahoo , Soumyadeep Sinha 1 , Seungmin Yeo 2 , Hyungjun Kim 2 , Ravindra N. Bulakhe , Jaeyeong Heo 1 , Jae-Jin Shim , Soo-Hyun Kim
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2017-11-13 00:00:00 , DOI: 10.1021/acsami.7b12248 Dip K. Nandi , Sumanta Sahoo , Soumyadeep Sinha 1 , Seungmin Yeo 2 , Hyungjun Kim 2 , Ravindra N. Bulakhe , Jaeyeong Heo 1 , Jae-Jin Shim , Soo-Hyun Kim
Affiliation
|
This article takes an effort to establish the potential of atomic layer deposition (ALD) technique toward the field of supercapacitors by preparing molybdenum disulfide (MoS2) as its electrode. While molybdenum hexacarbonyl [Mo(CO)6] serves as a novel precursor toward the low-temperature synthesis of ALD-grown MoS2, H2S plasma helps to deposit its polycrystalline phase at 200 °C. Several ex situ characterizations such as X-ray diffractometry (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and so forth are performed in detail to study the as-grown MoS2 film on a Si/SiO2 substrate. While stoichiometric MoS2 with very negligible amount of C and O impurities was evident from XPS, the XRD and high-resolution transmission electron microscopy analyses confirmed the (002)-oriented polycrystalline h-MoS2 phase of the as-grown film. A comparative study of ALD-grown MoS2 as a supercapacitor electrode on 2-dimensional stainless steel and on 3-dimensional (3D) Ni-foam substrates clearly reflects the advantage and the potential of ALD for growing a uniform and conformal electrode material on a 3D-scaffold layer. Cyclic voltammetry measurements showed both double-layer capacitance and capacitance contributed by the faradic reaction at the MoS2 electrode surface. The optimum number of ALD cycles was also found out for achieving maximum capacitance for such a MoS2@3D-Ni-foam electrode. A record high areal capacitance of 3400 mF/cm2 was achieved for MoS2@3D-Ni-foam grown by 400 ALD cycles at a current density of 3 mA/cm2. Moreover, the ALD-grown MoS2@3D-Ni-foam composite also retains high areal capacitance, even up to a high current density of 50 mA/cm2. Finally, this directly grown MoS2 electrode on 3D-Ni-foam by ALD shows high cyclic stability (>80%) over 4500 charge–discharge cycles which must invoke the research community to further explore the potential of ALD for such applications.
中文翻译：
高度均匀的原子层沉积MoS 2 @ 3D-Ni-泡沫：一种制备超级电容器电极的新方法
本文通过准备将二硫化钼（MoS 2）用作电极，努力建立原子层沉积（ALD）技术在超级电容器领域的潜力。六羰基钼[Mo（CO）6 ]是ALD合成MoS 2低温合成的新型前体，而H 2 S等离子体有助于在200°C沉积其多晶相。详细地进行了几种异位表征，例如X射线衍射法（XRD），拉曼光谱法，X射线光电子能谱法（XPS）等，以研究Si / SiO 2衬底上生长的MoS 2膜。化学计量比的MoS 2通过XPS可以明显看出C和O杂质的含量几乎可以忽略不计，X射线衍射和高分辨率透射电子显微镜分析证实了成膜薄膜的（002）取向多晶h-MoS 2相。ALD生长的MoS 2作为二维不锈钢和3维（3D）Ni泡沫基材上的超级电容器电极的比较研究清楚地反映了ALD的优势和潜力，因为ALD可以在硅上生长均匀和共形的电极材料3D支架层。循环伏安法测量显示双层电容和由MoS 2电极表面的法拉第反应贡献的电容。还找到了最佳的ALD循环次数，以实现此类MoS的最大电容2 @ 3D-Ni泡沫电极。对于通过400 ALD循环以3 mA / cm 2的电流密度生长的MoS 2 @ 3D-Ni-泡沫，达到了创纪录的3400 mF / cm 2的高面积电容。而且，ALD生长的MoS 2 @ 3D-Ni-泡沫复合材料还保持高的面电容，甚至高达50mA / cm 2的高电流密度。最后，通过ALD在3D-Ni-泡沫上直接生长的MoS 2电极在4500次充放电循环中显示出高循环稳定性（> 80％），这必须唤起研究界的兴趣，以进一步探索ALD在此类应用中的潜力。
更新日期：2017-11-14
中文翻译：
高度均匀的原子层沉积MoS 2 @ 3D-Ni-泡沫：一种制备超级电容器电极的新方法
本文通过准备将二硫化钼（MoS 2）用作电极，努力建立原子层沉积（ALD）技术在超级电容器领域的潜力。六羰基钼[Mo（CO）6 ]是ALD合成MoS 2低温合成的新型前体，而H 2 S等离子体有助于在200°C沉积其多晶相。详细地进行了几种异位表征，例如X射线衍射法（XRD），拉曼光谱法，X射线光电子能谱法（XPS）等，以研究Si / SiO 2衬底上生长的MoS 2膜。化学计量比的MoS 2通过XPS可以明显看出C和O杂质的含量几乎可以忽略不计，X射线衍射和高分辨率透射电子显微镜分析证实了成膜薄膜的（002）取向多晶h-MoS 2相。ALD生长的MoS 2作为二维不锈钢和3维（3D）Ni泡沫基材上的超级电容器电极的比较研究清楚地反映了ALD的优势和潜力，因为ALD可以在硅上生长均匀和共形的电极材料3D支架层。循环伏安法测量显示双层电容和由MoS 2电极表面的法拉第反应贡献的电容。还找到了最佳的ALD循环次数，以实现此类MoS的最大电容2 @ 3D-Ni泡沫电极。对于通过400 ALD循环以3 mA / cm 2的电流密度生长的MoS 2 @ 3D-Ni-泡沫，达到了创纪录的3400 mF / cm 2的高面积电容。而且，ALD生长的MoS 2 @ 3D-Ni-泡沫复合材料还保持高的面电容，甚至高达50mA / cm 2的高电流密度。最后，通过ALD在3D-Ni-泡沫上直接生长的MoS 2电极在4500次充放电循环中显示出高循环稳定性（> 80％），这必须唤起研究界的兴趣，以进一步探索ALD在此类应用中的潜力。
京公网安备 11010802027423号