Rhenium diselenide (ReSe₂) has a small bandgap (<1 eV), which facilitates its longer wavelength photodetection capability. However, ReSe₂-based photodetectors have presented relatively low photoresponsivity compared to devices fabricated on conventional transition metal dichalcogenides (TMDs), such as MoS₂ and WSe₂. Here, we demonstrate a high-performance ReSe₂ near-infrared photodetector with high photoresponsivity (4.2 × 10⁴ A/W), a wide detection range (520–1064 nm), and fast photoswitching time (τ_rise: 1.9 ms and τ_decay: 4.5 ms). This was accomplished by an organic molecule-based n-doping technique based on a (3-aminopropyl)trimethoxysilane (APTMS). The n-doping concentration of ReSe₂ was controlled between 7.82 × 10¹⁰ and 3.90 × 10¹¹ cm⁻², which lies in the nondegenerate regime. After the APTMS treatment, photoresponsivity values were increased from 4.3 × 10³ to 4.2 × 10⁴ A/W (tenfold at λ = 785 nm) and from 3.6 to 28.5 A/W (eightfold at λ = 1064 nm). The photoswitching times obtained after the n-type doping (τ_rise/τ_decay: 1.9/4.5 ms) were also shorter than previously reported values in the devices formed on rhenium-based TMDs. We expect that this doping technique would be useful for the integration and performance optimization of various TMD-based devices in the future.

二硒化（（ReSe ₂）具有小的带隙（<1 eV），这有利于其更长的波长光检测能力。然而，与在诸如MoS ₂和WSe _2的传统过渡金属_二卤化金属（TMD）上制造的器件相比，基于ReSe ₂的光电探测器呈现出相对较低的光响应性。在这里，我们展示了一种高性能的ReSe ₂近红外光电探测器，该探测器具有高光敏度（4.2×10 ⁴ A / W），宽广的检测范围（520–1064 nm）和快速的光开关时间（τ_上升：1.9 ms和τ）_衰变：4.5毫秒）。这是通过基于有机分子的基于（3-氨丙基）三甲氧基硅烷（APTMS）的n掺杂技术完成的。ReSe ₂的n掺杂浓度被控制在7.82×10 ¹⁰和3.90×10 ¹¹  cm ^-2之间，处于非简并状态。在APTMS处理后，光敏度值从4.3×10 ³增加到4.2×10 ⁴ A / W（在λ= 785 nm时是十倍）和从3.6到28.5 A / W（在λ= 1064 nm时是八倍）。在n型掺杂之后获得的光开关时间（τ_上升/τ_衰减：1.9 / 4.5 ms）也比以前在reported基TMD上形成的器件中报告的值短。我们希望这种掺杂技术将来对各种基于TMD的设备的集成和性能优化有用。