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Structure–Property Relationships of Semiconducting Polymers for Flexible and Durable Polymer Field-Effect Transistors
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2017-11-09 00:00:00 , DOI: 10.1021/acsami.7b12435 Min Je Kim 1 , A-Ra Jung 2 , Myeongjae Lee 3 , Dongjin Kim 4 , Suhee Ro 2 , Seon-Mi Jin 5 , Hieu Dinh Nguyen 6 , Jeehye Yang 7 , Kyung-Koo Lee 6 , Eunji Lee 5 , Moon Sung Kang 7 , Hyunjung Kim 4 , Jong-Ho Choi 3 , BongSoo Kim 2 , Jeong Ho Cho 1
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2017-11-09 00:00:00 , DOI: 10.1021/acsami.7b12435 Min Je Kim 1 , A-Ra Jung 2 , Myeongjae Lee 3 , Dongjin Kim 4 , Suhee Ro 2 , Seon-Mi Jin 5 , Hieu Dinh Nguyen 6 , Jeehye Yang 7 , Kyung-Koo Lee 6 , Eunji Lee 5 , Moon Sung Kang 7 , Hyunjung Kim 4 , Jong-Ho Choi 3 , BongSoo Kim 2 , Jeong Ho Cho 1
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We report high-performance top-gate bottom-contact flexible polymer field-effect transistors (FETs) fabricated by flow-coating diketopyrrolopyrrole (DPP)-based and naphthalene diimide (NDI)-based polymers (P(DPP2DT-T2), P(DPP2DT-TT), P(DPP2DT-DTT), P(NDI2OD-T2), P(NDI2OD-F2T2), and P(NDI2OD-Se2)) as semiconducting channel materials. All of the polymers displayed good FET characteristics with on/off current ratios exceeding 107. The highest hole mobility of 1.51 cm2 V–1 s–1 and the highest electron mobility of 0.85 cm2 V–1 s–1 were obtained from the P(DPP2DT-T2) and P(NDI2OD-Se2) polymer FETs, respectively. The impacts of the polymer structures on the FET performance are well-explained by the interplay between the crystallinity, the tendency of the polymer backbone to adopt an edge-on orientation, and the interconnectivity of polymer fibrils in the film state. Additionally, we demonstrated that all of the flexible polymer-based FETs were highly resistant to tensile stress, with negligible changes in their carrier mobilities and on/off ratios after a bending test. Conclusively, these high-performance, flexible, and durable FETs demonstrate the potential of semiconducting conjugated polymers for use in flexible electronic applications.
中文翻译：
柔性和耐用聚合物场效应晶体管的半导体聚合物的结构-性能关系
我们报告了通过流涂基于二酮吡咯并吡咯（DPP）和基于萘二酰亚胺（NDI）的聚合物（P（DPP2DT-T2），P（ DPP2DT-TT），P（DPP2DT-DTT），P（NDI2OD-T2），P（NDI2OD-F2T2）和P（NDI2OD-Se2））为半导体通道材料。所有聚合物均显示出良好的FET特性，开/关电流比超过10 7。最高空穴迁移率1.51 cm 2 V –1 s –1，最高电子迁移率0.85 cm 2 V –1 s –1分别从P（DPP2DT-T2）和P（NDI2OD-Se2）聚合物FET获得。聚合物结构对FET性能的影响可以通过结晶度，聚合物主链采用边沿取向的趋势以及薄膜状态下的聚合物原纤维的互连性之间的相互作用来很好地解释。此外，我们证明了所有基于柔性聚合物的FET都高度抗拉应力，在弯曲测试后其载流子迁移率和开/关比的变化可忽略不计。总之，这些高性能，柔性和耐用的FET证明了半导体共轭聚合物在柔性电子应用中的潜力。
更新日期：2017-11-09
中文翻译：
柔性和耐用聚合物场效应晶体管的半导体聚合物的结构-性能关系
我们报告了通过流涂基于二酮吡咯并吡咯（DPP）和基于萘二酰亚胺（NDI）的聚合物（P（DPP2DT-T2），P（ DPP2DT-TT），P（DPP2DT-DTT），P（NDI2OD-T2），P（NDI2OD-F2T2）和P（NDI2OD-Se2））为半导体通道材料。所有聚合物均显示出良好的FET特性，开/关电流比超过10 7。最高空穴迁移率1.51 cm 2 V –1 s –1，最高电子迁移率0.85 cm 2 V –1 s –1分别从P（DPP2DT-T2）和P（NDI2OD-Se2）聚合物FET获得。聚合物结构对FET性能的影响可以通过结晶度，聚合物主链采用边沿取向的趋势以及薄膜状态下的聚合物原纤维的互连性之间的相互作用来很好地解释。此外，我们证明了所有基于柔性聚合物的FET都高度抗拉应力，在弯曲测试后其载流子迁移率和开/关比的变化可忽略不计。总之，这些高性能，柔性和耐用的FET证明了半导体共轭聚合物在柔性电子应用中的潜力。
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