Controlled Synthesis of High-Quality Monolayered α-In2Se3 via Physical Vapor Deposition,Nano Letters

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Controlled Synthesis of High-Quality Monolayered α-In2Se3 via Physical Vapor Deposition
Nano Letters ( IF 9.6 ) Pub Date : 2015-09-16 00:00:00 , DOI: 10.1021/acs.nanolett.5b01590
Jiadong Zhou ₁ , Qingsheng Zeng ₁ , Danhui Lv ₂ , Linfeng Sun ₃ , Lin Niu ₁ , Wei Fu ₁ , Fucai Liu ₁ , Zexiang Shen _{1,

3} , Chuanhong Jin ₂ , Zheng Liu _{1,

4}

Affiliation

In this work, we have demonstrated the synthesis of high-quality monolayered α-In₂Se₃ using physical vapor deposition method under atmospheric pressure. The quality of the In₂Se₃ atomic layers has been confirmed by complementary characterization technologies such as Raman/photoluminescence spectroscopies and atomic force microscope. The atomically resolved images have been obtained by the annular dark-field scanning transmission electron microscope. The field-effect transistors have been fabricated using the atomically layered In₂Se₃ and exhibit p-type semiconducting behaviors with the mobility up to 2.5 cm²/ Vs. The In₂Se₃ layers also show a good photoresponsivity of 340A/W, as well as 6 ms response time for the rise and 12 ms for the fall. These results make In₂Se₃ atomic layers a promising candidate for the optoelectronic and photosensitive device applications.

中文翻译：

高品质的单层控制合成α-在₂硒₃经由物理气相沉积

在这项工作中，我们已经证明的高品质的合成单层α-在₂硒₃使用在大气压下的物理气相沉积法。In ₂ Se ₃原子层的质量已通过互补的表征技术（如拉曼/光致发光光谱法和原子力显微镜）得到证实。通过环形暗场扫描透射电子显微镜已经获得了原子分辨的图像。场效应晶体管是使用原子层状的In ₂ Se ₃制成的，具有p型半导体行为，迁移率高达2.5 cm ² / Vs。In ₂ Se₃层也显示出340A / W的良好光响应性，上升的响应时间为6 ms，下降的响应时间为12 ms。这些结果使In ₂ Se ₃原子层成为光电子和光敏器件应用的有希望的候选者。

更新日期：2015-09-16

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