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Robust 2D Room-Temperature Dilute Ferrimagnetism Enhancement in Freestanding Ammoniated Atom-Thin [0001] h-BN Nanoplates
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2017-11-01 00:00:00 , DOI: 10.1021/acsami.7b13623
Jian-Min Li 1
Affiliation  

The author reports an anthracene vapor-assisted transport growth (∼4.8% in yield) of freestanding atomically thin pristine two-dimensional (2D) hexagonal boron nitride (h-BN) nanoplates directly from bulk powders. A room-temperature dilute magnetism was first observed in the pyrolytic 2D [0001] h-BN nanoplates, which is attributed to the missing N atom numbers (NN) or existence of a nitrogen-vacancy (Nv) with volume fraction ∼1.46%. Upon the postannealing in ammonia, the unsupported ammoniated 2D h-BN nanoplates showed an enhanced robust ferrimagnetism with the effective magnetic moment as high as 0.024 μB/per N, and Néel temperature at 174.9 K. At 295 K, a symmetric electron paramagnetic resonance peak signal was experimentally measured at g ∼ 2.1267, revealing the presence of an unpaired electron trapped at a B atom site in B-rich h-BN. As a promising 2D dilute magnetic semiconductor candidate, our finding favors the ammoniated atom-thin h-BN nanoplate for realization of spintronic nanodevices operating at room temperature.

中文翻译:

独立的氨化薄原子[0001] h-BN纳米板中的稳健2D室温室温稀亚铁磁性增强。

作者报告了直接从散装粉末中得到的蒽原子蒸气辅助的运输增长(产率约为4.8%),这些原子是原子独立的原始薄质二维(6D)六角形氮化硼(h-BN)纳米板。首先在热解二维[0001] h-BN纳米板上观察到室温稀磁,这是由于缺少N原子数(N N)或存在氮空位(N v)所致,其体积分数约为1.46。 %。当在氨的后续退火,不支持的氨化2D的h-BN纳米片显示出增强的鲁棒亚铁磁性与有效磁矩高达0.024μ/每N,和奈尔温度在174.9 K.在295 K,对称电子顺磁共振峰值信号在g处通过实验测量〜2.1267,表明存在于富B的h-BN中的B原子位点处捕获的不成对电子。作为有前途的2D稀磁半导体候选材料,我们的发现支持氨化的原子薄h-BN纳米板来实现在室温下运行的自旋电子纳米器件。
更新日期:2017-11-01
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