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Structural and Optical Properties of Single- and Few-Layer Magnetic Semiconductor CrPS4
ACS Nano ( IF 15.8 ) Pub Date : 2017-10-30 00:00:00 , DOI: 10.1021/acsnano.7b04679 Jinhwan Lee 1 , Taeg Yeoung Ko 2 , Jung Hwa Kim 3 , Hunyoung Bark 4 , Byunggil Kang 4 , Soon-Gil Jung 5, 6 , Tuson Park 5, 6 , Zonghoon Lee 3 , Sunmin Ryu 2, 7 , Changgu Lee 1, 4
ACS Nano ( IF 15.8 ) Pub Date : 2017-10-30 00:00:00 , DOI: 10.1021/acsnano.7b04679 Jinhwan Lee 1 , Taeg Yeoung Ko 2 , Jung Hwa Kim 3 , Hunyoung Bark 4 , Byunggil Kang 4 , Soon-Gil Jung 5, 6 , Tuson Park 5, 6 , Zonghoon Lee 3 , Sunmin Ryu 2, 7 , Changgu Lee 1, 4
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Atomically thin binary two-dimensional (2D) semiconductors exhibit diverse physical properties depending on their composition, structure, and thickness. By adding another element in these materials, which will lead to formation of ternary 2D materials, the property and structure would greatly change and significantly expanded applications could be explored. In this work, we report structural and optical properties of atomically thin chromium thiophosphate (CrPS4), a ternary antiferromagnetic semiconductor. Its structural details were revealed by X-ray and electron diffraction. Transmission electron microscopy showed that preferentially cleaved edges are parallel to diagonal Cr atom rows, which readily identified their crystallographic orientations. Strong in-plane optical anisotropy induced birefringence that also enabled efficient determination of crystallographic orientation using polarized microscopy. The lattice vibrations were probed by Raman spectroscopy and exhibited significant dependence on thickness of crystals exfoliated down to a single layer. Optical absorption determined by reflectance contrast was dominated by d–d-type transitions localized at Cr3+ ions, which was also responsible for the major photoluminescence peak at 1.31 eV. The spectral features in the absorption and emission spectra exhibited noticeable thickness dependence and hinted at a high photochemical activity for single-layer CrPS4. The current structural and optical investigation will provide a firm basis for future study and application of this kind of atomically thin magnetic semiconductors.
中文翻译：
单层和多层磁性半导体CrPS 4的结构和光学性质
原子薄的二元二维（2D）半导体根据其成分，结构和厚度表现出多种物理特性。通过在这些材料中添加另一种元素，这将导致三元2D材料的形成，其性质和结构将发生巨大变化，并且可以探索显着扩展的应用程序。在这项工作中，我们报告了原子上薄的硫代磷酸铬（CrPS 4），一种三元反铁磁半导体。通过X射线和电子衍射揭示了其结构细节。透射电子显微镜显示，优先裂解的边缘平行于对角线的Cr原子行，可以容易地确定其晶体学取向。强大的平面光学各向异性引起的双折射也使使用偏光显微镜可以有效确定晶体取向。用拉曼光谱法探测晶格振动，并显示出对剥落至单层的晶体厚度的显着依赖性。由反射率对比确定的光吸收主要由位于Cr 3+处的d-d型跃迁控制离子，这也是造成1.31 eV处的主要光致发光峰的原因。吸收和发射光谱中的光谱特征表现出明显的厚度依赖性，并暗示了单层CrPS 4的高光化学活性。当前的结构和光学研究将为此类原子薄磁性半导体的进一步研究和应用提供坚实的基础。
更新日期：2017-10-30
中文翻译：
单层和多层磁性半导体CrPS 4的结构和光学性质
原子薄的二元二维（2D）半导体根据其成分，结构和厚度表现出多种物理特性。通过在这些材料中添加另一种元素，这将导致三元2D材料的形成，其性质和结构将发生巨大变化，并且可以探索显着扩展的应用程序。在这项工作中，我们报告了原子上薄的硫代磷酸铬（CrPS 4），一种三元反铁磁半导体。通过X射线和电子衍射揭示了其结构细节。透射电子显微镜显示，优先裂解的边缘平行于对角线的Cr原子行，可以容易地确定其晶体学取向。强大的平面光学各向异性引起的双折射也使使用偏光显微镜可以有效确定晶体取向。用拉曼光谱法探测晶格振动，并显示出对剥落至单层的晶体厚度的显着依赖性。由反射率对比确定的光吸收主要由位于Cr 3+处的d-d型跃迁控制离子，这也是造成1.31 eV处的主要光致发光峰的原因。吸收和发射光谱中的光谱特征表现出明显的厚度依赖性，并暗示了单层CrPS 4的高光化学活性。当前的结构和光学研究将为此类原子薄磁性半导体的进一步研究和应用提供坚实的基础。
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