The controlled synthesis of large-area, atomically thin molybdenum ditelluride (MoTe2) crystals is crucial for its various applications based on the attractive properties of this emerging material. In this work, we developed a chemical vapor deposition synthesis to produce large-area, uniform, and highly crystalline few-layer 2H and 1T' MoTe2 films. It was found that these two different phases of MoTe2 can be grown depending on the choice of Mo precursor. Because of the highly crystalline structure, the as-grown few-layer 2H MoTe2 films display electronic properties that are comparable to those of mechanically exfoliated MoTe2 flakes. Our growth method paves the way for the large-scale application of MoTe2 in high-performance nanoelectronics and optoelectronics.

中文翻译：

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高质量均匀少层 MoTe2 的大面积合成

基于这种新兴材料的有吸引力的特性，大面积、原子级薄二碲化钼 (MoTe2) 晶体的受控合成对其各种应用至关重要。在这项工作中，我们开发了一种化学气相沉积合成方法来生产大面积、均匀且高度结晶的少层 2H 和 1T' MoTe2 薄膜。发现这两种不同的 MoTe2 相可以根据 Mo 前驱体的选择而生长。由于高度结晶结构，生长的少层 2H MoTe2 薄膜显示出与机械剥离的 MoTe2 薄片相当的电子特性。我们的生长方法为 MoTe2 在高性能纳米电子学和光电子学中的大规模应用铺平了道路。