肖特基和欧姆金纳米催化剂对ZnO纳米线的稳定性,Nano Letters

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肖特基和欧姆金纳米催化剂对ZnO纳米线的稳定性
Nano Letters ( IF 9.6 ) Pub Date : 2017-10-17 00:00:00 , DOI: 10.1021/acs.nanolett.7b02561
Alex M. Lord ₁ , Quentin M. Ramasse ₂ , Despoina M. Kepaptsoglou ₂ , Priyanka Periwal _{3,

4} , Frances M. Ross ₄ , Steve P. Wilks ₅

Affiliation

可制造的纳米器件现在必须成为纳米技术研究的主要目标，以确保可以充分利用纳米材料的增强特性并实现基础科学所暴露的希望。在这里，我们测试Au纳米催化剂-ZnO纳米线触点的电稳定性，以确定电传输性能和金属-半导体界面的极限。虽然已经确定了成年金纳米催化剂接触到ZnO纳米线的传输特性，但尚未研究界面在长时间段内的稳定性以及欧姆或肖特基函数的电极限。在这项工作中，我们使用了最近开发的迭代分析过程，该过程将多探针传输测量与随后的像差校正扫描透射电子显微镜直接相关，以研究将纳米线推至其电极限并显示出金属发生结构变化时的电学，结构和化学性质。 –nanowire接口或在nanowire中轴处。欧姆接触表现出增强的量子力学边缘隧穿传输性能，这是由于在接触边缘处由于强大的金属-支持相互作用而产生了额外的本征半导体材料。欧姆接触的低电阻特性导致在纳米线跨度的中部发生灾难性击穿，在该处发生最大的加热效果。当纳米线处于生长的原始状态并显示出完全不同的击穿特性时，可以观察到肖特基型Au-纳米线接触。高阻整流I – V行为随着电流的增加而降低，从而导致整流效应永久减弱，并且在隧道电流集中的Au界面边缘原子级结构发生变化。此外，为了研究修饰的纳米线（例如可能用于设备中的纳米线），通过简单的蚀刻处理即可去除欧姆纳米线触点界面边缘处的纳米级隧穿路径，并且纳米线显示出相似的I – V肖特基原始接触时击穿过程中的特性。显示出击穿发生在纳米线中轴或Au触点处，具体取决于Au触点界面的初始电导率。这些结果表明，金纳米线结构能够承受长时间的电应力，并且在高电流密度下稳定，从而确保它们是纳米线器件设计的理想组件，同时提供了选择其他金纳米线系统的电传输特性的灵活性。目前无法交付。

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Stability of Schottky and Ohmic Au Nanocatalysts to ZnO Nanowires

Manufacturable nanodevices must now be the predominant goal of nanotechnological research to ensure the enhanced properties of nanomaterials can be fully exploited and fulfill the promise that fundamental science has exposed. Here, we test the electrical stability of Au nanocatalyst–ZnO nanowire contacts to determine the limits of the electrical transport properties and the metal–semiconductor interfaces. While the transport properties of as-grown Au nanocatalyst contacts to ZnO nanowires have been well-defined, the stability of the interfaces over lengthy time periods and the electrical limits of the ohmic or Schottky function have not been studied. In this work, we use a recently developed iterative analytical process that directly correlates multiprobe transport measurements with subsequent aberration-corrected scanning transmission electron microscopy to study the electrical, structural, and chemical properties when the nanowires are pushed to their electrical limits and show structural changes occur at the metal–nanowire interface or at the nanowire midshaft. The ohmic contacts exhibit enhanced quantum-mechanical edge-tunneling transport behavior because of additional native semiconductor material at the contact edge due to a strong metal–support interaction. The low-resistance nature of the ohmic contacts leads to catastrophic breakdown at the middle of the nanowire span where the maximum heating effect occurs. Schottky-type Au–nanowire contacts are observed when the nanowires are in the as-grown pristine state and display entirely different breakdown characteristics. The higher-resistance rectifying I–V behavior degrades as the current is increased which leads to a permanent weakening of the rectifying effect and atomic-scale structural changes at the edge of the Au interface where the tunneling current is concentrated. Furthermore, to study modified nanowires such as might be used in devices the nanoscale tunneling path at the interface edge of the ohmic nanowire contacts is removed with a simple etch treatment and the nanowires show similar I–V characteristics during breakdown as the Schottky pristine contacts. Breakdown is shown to occur either at the nanowire midshaft or at the Au contact depending on the initial conductivity of the Au contact interface. These results demonstrate the Au–nanowire structures are capable of withstanding long periods of electrical stress and are stable at high current densities ensuring they are ideal components for nanowire-device designs while providing the flexibility of choosing the electrical transport properties which other Au–nanowire systems cannot presently deliver.

更新日期：2017-10-17

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