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Growth of SiC Whiskers onto Carbonizing Coir Fibers by Using Silicon Slurry Waste
ACS Sustainable Chemistry & Engineering ( IF 7.1 ) Pub Date : 2017-10-12 00:00:00 , DOI: 10.1021/acssuschemeng.7b02558
Yue Cao 1 , Daoping Xiang 1 , Hui Li 1 , Rong Ren 1 , Zhiheng Xing 1
ACS Sustainable Chemistry & Engineering ( IF 7.1 ) Pub Date : 2017-10-12 00:00:00 , DOI: 10.1021/acssuschemeng.7b02558
Yue Cao 1 , Daoping Xiang 1 , Hui Li 1 , Rong Ren 1 , Zhiheng Xing 1
Affiliation
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To reduce environmental pollution and waste of resources, it is very important to recycle valuable materials in silicon slurry waste (SSW). We report a novel method for the rapid preparation of SiC nanowhiskers by spark plasma (SP) assisted thermal treatment using SSW as the silicon source. In the preparation process, coir fibers were used as the carbon source and whisker growth substrate. At 1100–1300 °C, carbon-rich tadpole-like 3C–SiC whiskers with Fe catalyst caps were prepared by the vapor–liquid–solid growth mechanism. At 1400–1600 °C, carbon-rich, stick-like 3C–SiC whiskers without Fe catalyst caps with aspect ratios of about 40, and diameters of about 50 nm were prepared by the vapor–solid growth mechanism. The SiC whiskers grew along the [111] direction on the (111) plane at different temperatures. At the optimum temperature of 1500 °C, the silicon in SSW reacted completely, and SiC whiskers with good morphology were prepared. Furthermore, the photoluminescence (PL) spectra of SiC whiskers showed strong blue-violet emission at 450 nm. Accordingly, this study provides an environmentally friendly method for preparing SiC whiskers.
中文翻译：
利用硅浆废料在碳化椰壳纤维上生长SiC晶须
为了减少环境污染和资源浪费，回收硅浆废料（SSW）中的有价值的材料非常重要。我们报告了一种新颖的方法，通过使用SSW作为硅源的火花等离子体（SP）辅助热处理快速制备SiC纳米晶须。在制备过程中，椰壳纤维用作碳源和晶须生长基质。在1100–1300°C下，通过气-液-固生长机理制备了带有Fe催化剂盖的富碳t状3C-SiC晶须。在1400–1600°C下，通过气固生长机理制备了长径比约为40，直径约为50 nm的富含碳的棒状3C-SiC晶须，没有铁催化剂盖。SiC晶须在不同温度下沿[111]方向在（111）平面上生长。在1500°C的最佳温度下，SSW中的硅完全反应，制备出形态良好的SiC晶须。此外，SiC晶须的光致发光（PL）光谱在450 nm处显示出强烈的蓝紫色发射。因此，该研究提供了一种制备SiC晶须的环境友好的方法。
更新日期：2017-10-13
中文翻译：
利用硅浆废料在碳化椰壳纤维上生长SiC晶须
为了减少环境污染和资源浪费，回收硅浆废料（SSW）中的有价值的材料非常重要。我们报告了一种新颖的方法，通过使用SSW作为硅源的火花等离子体（SP）辅助热处理快速制备SiC纳米晶须。在制备过程中，椰壳纤维用作碳源和晶须生长基质。在1100–1300°C下，通过气-液-固生长机理制备了带有Fe催化剂盖的富碳t状3C-SiC晶须。在1400–1600°C下，通过气固生长机理制备了长径比约为40，直径约为50 nm的富含碳的棒状3C-SiC晶须，没有铁催化剂盖。SiC晶须在不同温度下沿[111]方向在（111）平面上生长。在1500°C的最佳温度下，SSW中的硅完全反应，制备出形态良好的SiC晶须。此外，SiC晶须的光致发光（PL）光谱在450 nm处显示出强烈的蓝紫色发射。因此，该研究提供了一种制备SiC晶须的环境友好的方法。
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