A simple synthesis of Ga2O3 and GaN nanocrystals†,RSC Advances

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A simple synthesis of Ga2O3 and GaN nanocrystals†
RSC Advances ( IF 3.9 ) Pub Date : 2017-10-12 00:00:00 , DOI: 10.1039/c7ra10639d
Erwei Huang _{1,

2,

3,

4,

5} , Juxia Li _{1,

2,

3,

4,

5} , Guangjun Wu _{1,

2,

3,

4,

5} , Weili Dai _{1,

2,

3,

4,

5} , Naijia Guan _{1,

2,

3,

4,

5} , Landong Li _{1,

2,

3,

4,

5}

Affiliation

The synthesis of gallium oxide and nitride nanocrystals is challenging. Herein, a forced hydrolysis route is developed to synthesize α-GaOOH and the morphology control of nanocrystals is realized by adjusting the ratios of ionic strength in the synthesis system. The as-prepared α-GaOOH nanorods can be transformed into α-Ga₂O₃ nanorods upon calcination and can be further transformed into GaN nanocrystal assemblies through nitridation at elevated temperatures, which provides a top-down strategy to gallium oxide and nitride nanocrystals. The synthesis results are investigated by means of X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The optical properties, i.e. ultra-violet visible absorption (UV-vis) and photoluminescence, of as-obtained α-Ga₂O₃ nanocrystals with different morphologies are examined and the morphology–property relationship is discussed.

中文翻译：

Ga ₂ O ₃和GaN纳米晶体的简单合成†

氧化镓和氮化物纳米晶体的合成具有挑战性。在此，开发了强制水解路线以合成α-GaOOH，并且通过调节合成系统中离子强度的比率来实现纳米晶体的形态控制。所制备的α-GaOOH纳米棒可以转化为α -镓_2个ö ₃在煅烧纳米棒，并且可以进一步在升高的温度下通过氮化变换成的GaN纳米晶体组件，其提供自顶向下的策略，以镓氧化物和氮化物的纳米晶体。通过X射线衍射（XRD），拉曼光谱，扫描电子显微镜（SEM）和透射电子显微镜（TEM）研究了合成结果。光学性质，即紫外可见吸收（UV-VIS）和光致发光，作为得到的α-Ga中_2个ö ₃纳米晶体具有不同的形态进行检查和形态性质关系进行了探讨。

更新日期：2017-10-12

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