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High‐Mobility Transparent p‐Type CuI Semiconducting Layers Fabricated on Flexible Plastic Sheets: Toward Flexible Transparent Electronics
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2017-10-10 , DOI: 10.1002/aelm.201700298 Naoomi Yamada 1 , Ryuichiro Ino 1 , Haruka Tomura 1 , Yuumi Kondo 1 , Yoshihiko Ninomiya 1
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2017-10-10 , DOI: 10.1002/aelm.201700298 Naoomi Yamada 1 , Ryuichiro Ino 1 , Haruka Tomura 1 , Yuumi Kondo 1 , Yoshihiko Ninomiya 1
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Transparent p‐type CuI layers with high hole mobility can be fabricated on flexible plastic sheets, a system which has been unattainable with p‐type transparent oxide semiconductors. Mildly heat‐treated CuI layers have mobilities of ≈20 cm2 V−1 s−1, which are comparable to those of p‐type GaN epilayers. Highly transparent p–n diodes with sufficient rectification ratio (106) can be manufactured by employing a heterojunction of p‐type CuI and amorphous n‐type In‐Ga‐Zn‐O layers on plastic sheets. Thus, CuI can be regarded as an excellent transparent p‐type semiconductor for flexible transparent electronics.
中文翻译：
在柔性塑料板上制造的高迁移率透明p型CuI半导体层：面向柔性透明电子
具有高空穴迁移率的透明p型CuI层可以在柔性塑料板上制造，这是p型透明氧化物半导体无法实现的。经过轻度热处理的CuI层的迁移率约为20 cm 2 V -1 s -1，与p型GaN外延层的迁移率相当。可以通过在塑料板上使用p型CuI和非晶n型In-Ga-Zn-O层的异质结来制造具有足够整流比（10 6）的高度透明的p-n二极管。因此，CuI被认为是用于柔性透明电子产品的优秀透明p型半导体。
更新日期：2017-10-10
中文翻译：
在柔性塑料板上制造的高迁移率透明p型CuI半导体层：面向柔性透明电子
具有高空穴迁移率的透明p型CuI层可以在柔性塑料板上制造，这是p型透明氧化物半导体无法实现的。经过轻度热处理的CuI层的迁移率约为20 cm 2 V -1 s -1，与p型GaN外延层的迁移率相当。可以通过在塑料板上使用p型CuI和非晶n型In-Ga-Zn-O层的异质结来制造具有足够整流比（10 6）的高度透明的p-n二极管。因此，CuI被认为是用于柔性透明电子产品的优秀透明p型半导体。
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