Efficient Semipolar (11–22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11–22) GaN/Sapphire Templates,ACS Applied Materials & Interfaces

当前位置： X-MOL 学术 › ACS Appl. Mater. Interfaces › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Efficient Semipolar (11–22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11–22) GaN/Sapphire Templates
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2017-10-09 00:00:00 , DOI: 10.1021/acsami.7b11718
Hongjian Li ₁ , Michel Khoury ₁ , Bastien Bonef ₁ , Abdullah I. Alhassan ₁ , Asad J. Mughal ₁ , Ezzah Azimah _{1,

2} , Muhammad E.A. Samsudin _{1,

2} , Philippe De Mierry ₃ , Shuji Nakamura _{1,

4} , James S. Speck ₁ , Steven P. DenBaars _{1,

4}

Affiliation

We demonstrate efficient semipolar (11–22) 550 nm yellow/green InGaN light-emitting diodes (LEDs) with In_0.03Ga_0.97N barriers on low defect density (11–22) GaN/patterned sapphire templates. The In_0.03Ga_0.97N barriers were clearly identified, and no InGaN clusters were observed by atom probe tomography measurements. The semipolar (11–22) 550 nm InGaN LEDs (0.1 mm² size) show an output power of 2.4 mW at 100 mA and a peak external quantum efficiency of 1.3% with a low efficiency drop. In addition, the LEDs exhibit a small blue-shift of only 11 nm as injection current increases from 5 to 100 mA. These results suggest the potential to produce high efficiency semipolar InGaN LEDs with long emission wavelength on large-area sapphire substrates with economical feasibility.

中文翻译：

低缺陷密度（11-22）GaN /蓝宝石模板上的高效半极性（11-22）550 nm黄色/绿色InGaN发光二极管

我们展示了在低缺陷密度（11-22）GaN /蓝宝石图案蓝宝石模板上具有In _0.03 Ga _0.97 N势垒的高效半极性（11-22）550 nm黄色/绿色InGaN发光二极管（LED）。可以清楚地识别出In _0.03 Ga _0.97 N势垒，并且通过原子探针层析成像测量没有观察到InGaN团簇。半极性（11-22）550 nm InGaN LED（0.1 mm ²尺寸）在100 mA时的输出功率为2.4 mW，峰值外部量子效率为1.3％，效率下降较低。此外，随着注入电流从5 mA增加到100 mA，LED的蓝移仅为11 nm。这些结果表明，在经济的可行性下，有可能在大面积的蓝宝石衬底上生产具有长发射波长的高效半极性InGaN LED。

更新日期：2017-10-09

点击分享查看原文

点击收藏

阅读更多本刊新发论文本刊介绍/投稿指南