Alkyl chains are basic units in the design of organic semiconductors for purposes of enhancing solubility, tuning electronic energy levels, and tailoring molecular packing. This work demonstrates that the carrier mobilities of indeno[1,2‐b]fluorene‐6,12‐dione (IFD)‐based semiconductors can be dramatically enhanced by the incorporation of sulfur‐ or nitrogen‐linked side chains. Three IFD derivatives possessing butyl, butylthio, and dibutylamino substituents are synthesized, and their organic field‐effect transistors (OFET) are fabricated and characterized. The IFD possessing butyl substituents exhibits a very poor charge transport property with mobility lower than 10⁻⁷ cm² V⁻¹ s⁻¹. In contrast, the hole mobility is dramatically increased to 1.03 cm² V⁻¹ s⁻¹ by replacing the butyl units with dibutylamino groups (DBA‐IFD), while the butylthio‐modified IFD (BT‐IFD) derivative exhibits a high and balanced ambipolar charge transport property with the maximum hole and electron mobilities up to 0.71 and 0.65 cm² V⁻¹ s⁻¹, respectively. Moreover, the complementary metal–oxide–semiconductor‐like inverters incorporated with the ambipolar OFETs shows sharp inversions with a maximum gain value up to 173. This work reveals that modification of the aromatic core with heteroatom‐linked side chains, such as alkylthio or dialkylamino, can be an efficient strategy for the design of high‐performance organic semiconductors.

中文翻译：

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通过结合硫或氮连接的侧链，提高茚并[1,2-b]芴-6,12-二酮的电荷传输性质

烷基链是有机半导体设计中的基本单元，目的是增强溶解性，调节电子能级和调整分子堆积。这项工作表明，通过并入硫或氮连接的侧链可以大大提高基于茚并[1,2 - b ]芴-6,12-二酮（IFD）的半导体的载流子迁移率。合成了三种具有丁基，丁硫基和二丁基氨基取代基的IFD衍生物，并制造并表征了它们的有机场效应晶体管（OFET）。具有丁基取代基的IFD表现出非常差的电荷传输性能，其迁移率低于10 ^-7 cm ² V^-1 s ^-1。相比之下，通过用二丁基氨基基团（DBA-IFD）取代丁基单元，空穴迁移率显着增加至1.03 cm ² V ^-1 s ^-1，而丁硫基改性的IFD（BT-IFD）衍生物表现出高而平衡的平衡。最大空穴和电子迁移率高达0.71和0.65 cm ² V ^-1 s ^-1的双极性电荷传输性质， 分别。此外，与双极性OFET结合的类似互补金属氧化物半导体的逆变器显示出急剧的反转，最大增益值高达173。这项工作表明，杂原子连接的侧链（如烷硫基或二烷基氨基）对芳香族核的修饰可以是设计高性能有机半导体的有效策略。