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Resistive Switching Behavior in Organic–Inorganic Hybrid CH3NH3PbI3−xClx Perovskite for Resistive Random Access Memory Devices
Advanced Materials ( IF 27.4 ) Pub Date : 2015-08-31 , DOI: 10.1002/adma.201502889 Eun Ji Yoo 1, 2 , Miaoqiang Lyu 2 , Jung-Ho Yun 2 , Chi Jung Kang 3 , Young Jin Choi 1 , Lianzhou Wang 2
Advanced Materials ( IF 27.4 ) Pub Date : 2015-08-31 , DOI: 10.1002/adma.201502889 Eun Ji Yoo 1, 2 , Miaoqiang Lyu 2 , Jung-Ho Yun 2 , Chi Jung Kang 3 , Young Jin Choi 1 , Lianzhou Wang 2
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The CH3NH3PbI3−xClx organic–inorganic hybrid perovskite material demonstrates remarkable resistive switching behavior, which can be applicable in resistive random access memory devices. The simply designed Au/CH3NH3PbI3−xClx/FTO structure is fabricated by a low‐temperature, solution‐processable method, which exhibits remarkable bipolar resistive switching and nonvolatile properties.
中文翻译：
有机-无机杂化CH3NH3PbI3-xClx钙钛矿中的电阻转换行为，用于电阻随机存取存储设备
CH 3 NH 3 PbI 3− x Cl x有机-无机杂化钙钛矿材料显示出显着的电阻切换性能，可应用于电阻随机存取存储设备。简单设计的Au / CH 3 NH 3 PbI 3− x Cl x / FTO结构是通过低温，可溶液处理的方法制造的，具有出色的双极电阻切换和非易失性。
更新日期：2015-08-31
中文翻译：
有机-无机杂化CH3NH3PbI3-xClx钙钛矿中的电阻转换行为，用于电阻随机存取存储设备
CH 3 NH 3 PbI 3− x Cl x有机-无机杂化钙钛矿材料显示出显着的电阻切换性能，可应用于电阻随机存取存储设备。简单设计的Au / CH 3 NH 3 PbI 3− x Cl x / FTO结构是通过低温，可溶液处理的方法制造的，具有出色的双极电阻切换和非易失性。
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