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Direct Chemical Vapor Deposition Synthesis of Phase-Pure Iron Pyrite (FeS2) Thin Films
Chemistry of Materials ( IF 7.2 ) Pub Date : 2015-04-08 00:00:00 , DOI: 10.1021/acs.chemmater.5b00664 Leith Samad 1 , Miguel Cabán-Acevedo 1 , Melinda J. Shearer 1 , Kwangsuk Park 1 , Robert J. Hamers 1 , Song Jin 1
Chemistry of Materials ( IF 7.2 ) Pub Date : 2015-04-08 00:00:00 , DOI: 10.1021/acs.chemmater.5b00664 Leith Samad 1 , Miguel Cabán-Acevedo 1 , Melinda J. Shearer 1 , Kwangsuk Park 1 , Robert J. Hamers 1 , Song Jin 1
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Resurgent interest in iron pyrite (FeS2) as an earth-abundant, nontoxic semiconductor for solar applications has resulted in many attempts to grow phase-pure thin films via chemical vapor deposition (CVD). However, all thin films grown via CVD or sulfidation to date have contained marcasite phase or other iron sulfide impurities. Here, we report the use of metallic cobalt pyrite (cattierite, CoS2) thin films as an ideal substrate leading to the first direct growth of phase-pure iron pyrite thin films via atmospheric pressure CVD. This synthesis was achieved by reacting FeCl3 and ditert butyl disulfide (TBDS) at 400–450 °C. The products were confirmed as phase-pure iron pyrite using X-ray diffraction (XRD), Raman spectroscopy, and energy dispersive X-ray spectroscopy (EDS). In addition to phase-purity, the synthesis produced crystal domains >1 μm and a conformal coating 3–5 μm thick, which are attributed to the <2% lattice mismatch of the isostructural cattierite substrate. The surface was characterized by ultraviolet and X-ray photoelectron spectroscopy (UPS & XPS) and the electrical properties by electrochemical impedance spectroscopy (EIS) and Mott–Schottky analysis. The direct growth of a phase-pure iron pyrite film on a conductive substrate provides the most convenient configuration so far for potential solar cells.
中文翻译：
相纯铁黄铁矿（FeS 2）薄膜的直接化学气相沉积合成
对黄铁矿（FeS 2）的兴起引起了人们的兴趣，作为一种用于太阳能的地球上无毒的半导体，已经进行了许多尝试，旨在通过化学气相沉积（CVD）生长纯相薄膜。但是，迄今为止，所有通过CVD或硫化法生长的薄膜都含有镁铁矿相或其他硫化铁杂质。在这里，我们报告了使用金属黄铁矿（cattierite，CoS 2）薄膜作为理想的基材，从而通过大气压CVD首次实现了纯相黄铁矿薄膜的直接直接生长。该合成是通过使FeCl 3反应来实现的以及在400–450°C下的二叔丁基二硫化物（TBDS）。使用X射线衍射（XRD），拉曼光谱和能量色散X射线光谱（EDS）将产品确认为纯黄铁矿。除了相纯度以外，合成还产生了大于1μm的晶畴和3至5μm厚的保形涂层，这归因于同结构的钙钛矿衬底的晶格失配率小于2％。表面通过紫外和X射线光电子能谱（UPS＆XPS）表征，电性能通过电化学阻抗谱（EIS）和Mott–Schottky分析表征。在导电衬底上直接生长纯相黄铁矿薄膜为迄今为止的潜在太阳能电池提供了最方便的配置。
更新日期：2015-04-08
中文翻译：
相纯铁黄铁矿（FeS 2）薄膜的直接化学气相沉积合成
对黄铁矿（FeS 2）的兴起引起了人们的兴趣，作为一种用于太阳能的地球上无毒的半导体，已经进行了许多尝试，旨在通过化学气相沉积（CVD）生长纯相薄膜。但是，迄今为止，所有通过CVD或硫化法生长的薄膜都含有镁铁矿相或其他硫化铁杂质。在这里，我们报告了使用金属黄铁矿（cattierite，CoS 2）薄膜作为理想的基材，从而通过大气压CVD首次实现了纯相黄铁矿薄膜的直接直接生长。该合成是通过使FeCl 3反应来实现的以及在400–450°C下的二叔丁基二硫化物（TBDS）。使用X射线衍射（XRD），拉曼光谱和能量色散X射线光谱（EDS）将产品确认为纯黄铁矿。除了相纯度以外，合成还产生了大于1μm的晶畴和3至5μm厚的保形涂层，这归因于同结构的钙钛矿衬底的晶格失配率小于2％。表面通过紫外和X射线光电子能谱（UPS＆XPS）表征，电性能通过电化学阻抗谱（EIS）和Mott–Schottky分析表征。在导电衬底上直接生长纯相黄铁矿薄膜为迄今为止的潜在太阳能电池提供了最方便的配置。
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