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Bi2S3-Nanowire-Sensitized BiVO4 Sheets for Enhanced Visible-Light Photoelectrochemical Activities
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2017-08-24 00:00:00 , DOI: 10.1021/acs.jpcc.7b06838 Wuyou Wang 1 , Xuewen Wang 1 , Chengxi Zhou 1 , Biao Du 1 , Jianxin Cai 2 , Gang Feng 1 , Rongbin Zhang 1
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2017-08-24 00:00:00 , DOI: 10.1021/acs.jpcc.7b06838 Wuyou Wang 1 , Xuewen Wang 1 , Chengxi Zhou 1 , Biao Du 1 , Jianxin Cai 2 , Gang Feng 1 , Rongbin Zhang 1
Affiliation
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BiVO4 is widely used for photoelectrochemistry and photocatalytic oxygen evolution under visible-light irradiation. To extend the range of visible-light absorption and reduce the recombination rate of photoexcited electrons and holes, a BiVO4 sheet–Bi2S3 nanowire heterostructure was fabricated through an easy in situ hydrothermal method. In this method, Bi2S3 nanowires were uniformly coated onto the surface of BiVO4 sheets. The heterostructure exhibits a wide visible-light absorption band ranging from 525 to 900 nm after coupling with Bi2S3 nanowires. The BiVO4 sheet–Bi2S3 nanowire heterostructures were used for photoelectrochemical measurements and exhibited higher photocurrent intensity than those of BiVO4 sheets and BiVO4 particle–Bi2S3 under visible-light irradiation. The optimized amount of Bi2S3 in the heterostructure was approximately 2.4 at. %. The remarkable enhancements in the photoelectrochemical property were attributed mainly to the solid sensitization of Bi2S3 nanowires providing a number of photoexcited electrons, shortening transport distance in BiVO4 sheets, smoothening migration along Bi2S3 nanowires, and enhancing the synergistic effect between BiVO4 and Bi2S3.
中文翻译：
Bi 2 S 3-纳米线敏化的BiVO 4片增强了可见光光电化学活性
BiVO 4广泛用于可见光照射下的光电化学和光催化氧的释放。为了扩大可见光的吸收范围并降低光激发电子和空穴的复合率，通过易原位水热法制备了BiVO 4片-Bi 2 S 3纳米线异质结构。在该方法中，将Bi 2 S 3纳米线均匀地涂覆在BiVO 4片的表面上。与Bi 2 S 3纳米线耦合后，异质结构展现出从525到900 nm的宽可见光吸收带。BiVO 4薄板-Bi2 S 3纳米线异质结构用于光电化学测量，并在可见光照射下表现出比BiVO 4薄片和BiVO 4粒子-Bi 2 S 3更高的光电流强度。异质结构中Bi 2 S 3的最适量约为2.4 at。％。光电化学性能的显着增强主要归因于提供大量光激发电子的Bi 2 S 3纳米线的固体增感作用，缩短了BiVO 4片中的传输距离，使沿Bi 2 S的迁移变平滑3纳米线，并增强BiVO 4和Bi 2 S 3之间的协同效应。
更新日期：2017-08-25
中文翻译：
Bi 2 S 3-纳米线敏化的BiVO 4片增强了可见光光电化学活性
BiVO 4广泛用于可见光照射下的光电化学和光催化氧的释放。为了扩大可见光的吸收范围并降低光激发电子和空穴的复合率，通过易原位水热法制备了BiVO 4片-Bi 2 S 3纳米线异质结构。在该方法中，将Bi 2 S 3纳米线均匀地涂覆在BiVO 4片的表面上。与Bi 2 S 3纳米线耦合后，异质结构展现出从525到900 nm的宽可见光吸收带。BiVO 4薄板-Bi2 S 3纳米线异质结构用于光电化学测量，并在可见光照射下表现出比BiVO 4薄片和BiVO 4粒子-Bi 2 S 3更高的光电流强度。异质结构中Bi 2 S 3的最适量约为2.4 at。％。光电化学性能的显着增强主要归因于提供大量光激发电子的Bi 2 S 3纳米线的固体增感作用，缩短了BiVO 4片中的传输距离，使沿Bi 2 S的迁移变平滑3纳米线，并增强BiVO 4和Bi 2 S 3之间的协同效应。
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