可视化单层二硫化钼中无序边缘和晶界的纳米级激子弛豫特性。,Nature Communications

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可视化单层二硫化钼中无序边缘和晶界的纳米级激子弛豫特性。
Nature Communications ( IF 14.7 ) Pub Date : 2015-Aug-13 , DOI: 10.1038/ncomms8993
Wei Bao , Nicholas J. Borys , Changhyun Ko , Joonki Suh , Wen Fan , Andrew Thron , Yingjie Zhang , Alexander Buyanin , Jie Zhang , Stefano Cabrini , Paul D. Ashby , Alexander Weber-Bargioni , Sefaattin Tongay , Shaul Aloni , D. Frank Ogletree , Junqiao Wu , Miquel B. Salmeron , P. James Schuck

二维单层过渡金属二硫化氢半导体是原子薄，柔性光电和催化装置的理想构建基块。虽然对于二维系统具有挑战性，但亚衍射光学显微镜提供了纳米级的材料理解，这对于优化其光电性能至关重要。在这里，我们使用“ Campanile”纳米光学探针对单层MoS2内的激子复合物进行光谱成像，并以与许多关键光电过程有关的长度尺度进行亚波长分辨率（60 nm）。发现合成单层MoS2由两个不同的光电区域组成：一个内部，局部有序但介观地异质的二维量子阱和一个意想不到的〜300 nm宽，能量无序的边缘区域。进一步，用足够的分辨率对晶界进行成像，以量化局部激子猝灭现象，并且互补的纳米奥格显微镜表明，光学缺陷晶界和边缘区域是硫缺乏的。此处建立的纳米级结构-特性关系对于解释与边缘和边界相关的现象以及下一代二维光电器件的发展至关重要。

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Visualizing nanoscale excitonic relaxation properties of disordered edges and grain boundaries in monolayer molybdenum disulfide.

Two-dimensional monolayer transition metal dichalcogenide semiconductors are ideal building blocks for atomically thin, flexible optoelectronic and catalytic devices. Although challenging for two-dimensional systems, sub-diffraction optical microscopy provides a nanoscale material understanding that is vital for optimizing their optoelectronic properties. Here we use the 'Campanile' nano-optical probe to spectroscopically image exciton recombination within monolayer MoS2 with sub-wavelength resolution (60 nm), at the length scale relevant to many critical optoelectronic processes. Synthetic monolayer MoS2 is found to be composed of two distinct optoelectronic regions: an interior, locally ordered but mesoscopically heterogeneous two-dimensional quantum well and an unexpected ∼300-nm wide, energetically disordered edge region. Further, grain boundaries are imaged with sufficient resolution to quantify local exciton-quenching phenomena, and complimentary nano-Auger microscopy reveals that the optically defective grain boundary and edge regions are sulfur deficient. The nanoscale structure-property relationships established here are critical for the interpretation of edge- and boundary-related phenomena and the development of next-generation two-dimensional optoelectronic devices.

更新日期：2015-08-17

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