化学气相沉积合成具有光电级晶体质量的原子薄二硫化钼,ACS Nano

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化学气相沉积合成具有光电级晶体质量的原子薄二硫化钼
ACS Nano ( IF 15.8 ) Pub Date : 2015-08-13 00:00:00 , DOI: 10.1021/acsnano.5b02019
Ismail Bilgin _{1,

2} , Fangze Liu ₁ , Anthony Vargas ₁ , Andrew Winchester _{3,

4} , Michael K. L. Man ₄ , Moneesh Upmanyu ₅ , Keshav M. Dani ₄ , Gautam Gupta ₂ , Saikat Talapatra _{3,

4} , Aditya D. Mohite ₂ , Swastik Kar _{1,

6}

Affiliation

在任何新型材料的开发阶段，以大面积和低成本合成高质量样品的能力是最大的挑战之一。尽管化学气相沉积（CVD）方法为与CMOS兼容的大规模材料生长提供了一种有前途的低成本途径，但它常常达不到纳米电子学和光电子学对高质量的要求。我们目前使用MoO _2的直接气相硫化对单层和多层MoS ₂进行大规模CVD合成，这使我们能够获得场效应迁移率超过30 cm的极高质量单晶单层MoS ₂样品^2个/（V s）为单层。这些样品可以很容易地在各种基板上合成，并在拉曼光谱和整个区域面积超过数百平方微米的晶体的光致发光图中显示出高度的光电均匀性。由于它们的高结晶质量，与过去关于机械剥落样品的报道相比，这些样品的拉曼光谱通过峰显示了一系列的多声子过程，具有相同或更好的清晰度。这使我们能够研究2D-MoS _2中285和487 cm ^–1处极弱声子过程的层厚度和衬底依赖性。。这些样品的超高光电级晶体质量可以通过光电流光谱法进一步确定，该光谱法清楚地揭示了室温下的激子态，这一壮举以前仅在通过微机械剥落加工然后人工悬浮的样品上得到证明。越过战.。我们的方法反映了原子级薄的2D-MoS ₂在可扩展的高质量光电子学方面的发展迈出了一大步。

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Chemical Vapor Deposition Synthesized Atomically Thin Molybdenum Disulfide with Optoelectronic-Grade Crystalline Quality

The ability to synthesize high-quality samples over large areas and at low cost is one of the biggest challenges during the developmental stage of any novel material. While chemical vapor deposition (CVD) methods provide a promising low-cost route for CMOS compatible, large-scale growth of materials, it often falls short of the high-quality demands in nanoelectronics and optoelectronics. We present large-scale CVD synthesis of single- and few-layered MoS₂ using direct vapor-phase sulfurization of MoO₂, which enables us to obtain extremely high-quality single-crystal monolayer MoS₂ samples with field-effect mobility exceeding 30 cm²/(V s) in monolayers. These samples can be readily synthesized on a variety of substrates, and demonstrate a high-degree of optoelectronic uniformity in Raman and photoluminescence mapping over entire crystals with areas exceeding hundreds of square micrometers. Because of their high crystalline quality, Raman spectroscopy on these samples reveal a range of multiphonon processes through peaks with equal or better clarity compared to past reports on mechanically exfoliated samples. This enables us to investigate the layer thickness and substrate dependence of the extremely weak phonon processes at 285 and 487 cm^–1 in 2D-MoS₂. The ultrahigh, optoelectronic-grade crystalline quality of these samples could be further established through photocurrent spectroscopy, which clearly reveal excitonic states at room temperature, a feat that has been previously demonstrated only on samples which were fabricated by micro-mechanical exfoliation and then artificially suspended across trenches. Our method reflects a big step in the development of atomically thin, 2D-MoS₂ for scalable, high-quality optoelectronics.

更新日期：2015-08-13

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