Two-dimesional (2D) materials have attracted extensive interest due to their excellent electrical, thermal, mechanical, and optical properties. Graphene has been one of the most explored 2D materials. However, its zero band gap has limited its applications in electronic devices. Transition metal dichalcogenide (TMDC), another kind of 2D material, has a non-zero direct band gap (same charge carrier momentum in valence and conduction band) at monolayer state, promising for the efficient switching devices (e.g. field effect transistors). This review mainly focuses on the recent advances in charge carrier mobility and the challenges to achieve high mobility in the electronic devices based on 2D-TMDC materials and also includes an introduction of 2D materials along with the synthesis techniques. Finally, this review describes the possible methodology and future prospective to enhance the charge carrier mobility for electronic devices.

二维（2D）材料因其优异的电学、热学、机械和光学性能而引起了广泛的兴趣。石墨烯是研究最多的二维材料之一。然而，其零带隙限制了其在电子器件中的应用。过渡金属二硫化物（TMDC）是另一种二维材料，在单层状态下具有非零直接带隙（价带和导带中的载流子动量相同），有望用于高效开关器件（例如场效应晶体管）。本综述主要关注电荷载流子迁移率的最新进展以及基于 2D-TMDC 材料的电子器件实现高迁移率的挑战，还介绍了 2D 材料及其合成技术。最后，本综述描述了增强电子设备电荷载流子迁移率的可能方法和未来前景。