Collective interactions in functional materials can enable novel macroscopic properties like insulator-to-metal transitions. While implementing such materials into field-effect-transistor technology can potentially augment current state-of-the-art devices by providing unique routes to overcome their conventional limits, attempts to harness the insulator-to-metal transition for high-performance transistors have experienced little success. Here, we demonstrate a pathway for harnessing the abrupt resistivity transformation across the insulator-to-metal transition in vanadium dioxide (VO2), to design a hybrid-phase-transition field-effect transistor that exhibits gate controlled steep ('sub-kT/q') and reversible switching at room temperature. The transistor design, wherein VO2 is implemented in series with the field-effect transistor's source rather than into the channel, exploits negative differential resistance induced across the VO2 to create an internal amplifier that facilitates enhanced performance over a conventional field-effect transistor. Our approach enables low-voltage complementary n-type and p-type transistor operation as demonstrated here, and is applicable to other insulator-to-metal transition materials, offering tantalizing possibilities for energy-efficient logic and memory applications.

中文翻译：

---

基于陡峭电子相变的陡峭晶体管。

功能材料中的集体相互作用可以实现新颖的宏观特性，例如绝缘体到金属的过渡。尽管将这种材料应用于场效应晶体管技术可以通过提供克服常规限制的独特途径来增强当前的先进设备，但尝试利用绝缘体到金属的过渡来实现高性能晶体管的尝试收效甚微。在这里，我们演示了利用二氧化钒（VO2）的绝缘体到金属跃迁的突然电阻率变换，设计出具有栅极受控陡峭（'sub-kT / q'）和在室温下可逆切换。晶体管设计，其中VO2与场效应晶体管'串联 s的源极而不是进入通道，它利用在VO2两端感应的负差分电阻来创建内部放大器，与传统的场效应晶体管相比，该放大器有助于增强性能。我们的方法使低压互补n型和p型晶体管工作，如此处所示，并适用于其他绝缘体到金属的过渡材料，为高能效逻辑和存储器应用提供了诱人的可能性。