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Indolo[3,2-b]carbazole-Based Thin-Film Transistors with High Mobility and Stability
Journal of the American Chemical Society ( IF 14.4 ) Pub Date : 2005-01-01 , DOI: 10.1021/ja0456149
Yiliang Wu 1 , Yuning Li 1 , Sandra Gardner 1 , Beng S. Ong 1
Affiliation  

Proper functionalization of indolo[3,2-b]carbazole led to a new class of high-performance organic semiconductors suitable for organic thin-film transistor (OTFT) applications. While 5,11-diaryl-substituted indolo[3,2-b]carbazoles without long alkyl side chains provided amorphous thin films upon vacuum deposition, those with sufficiently long alkyl side chains such as 5,11-bis(4-octylphenyl)indolo[3,2-b]carbazole self-organized readily into highly crystalline layered structures under similar conditions. OTFTs using channel semiconductors of this nature exhibited excellent field-effect properties, with mobility up to 0.12 cm(2) V(-1) s(-1) and current on/off ratio to 10(7). As this class of organic semiconductors has relatively low HOMO levels and large band gaps, they also displayed good environmental stability even with prolonged exposure to amber light, an appealing characteristic for OTFT applications.

中文翻译:

具有高迁移率和稳定性的吲哚[3,2-b]咔唑基薄膜晶体管

吲哚[3,2-b]咔唑的适当功能化产生了一类适用于有机薄膜晶体管(OTFT)应用的新型高性能有机半导体。虽然没有长烷基侧链的 5,11-二芳基取代的吲哚[3,2-b]咔唑在真空沉积时提供了无定形薄膜,但那些具有足够长烷基侧链如 5,11-双(4-辛基苯基)吲哚[3,2-b]咔唑在类似条件下很容易自组织成高度结晶的层状结构。使用这种性质的通道半导体的 OTFT 表现出出色的场效应特性,迁移率高达 0.12 cm(2) V(-1) s(-1),电流开/关比为 10(7)。由于这类有机半导体具有相对较低的 HOMO 能级和较大的带隙,
更新日期:2005-01-01
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