This review highlights recent major progress in the development of organic semiconductors as electron transport n-channel materials in organic field transistors (OFETs). Three types of materials are discussed: 1) small molecules, 2) polymers, and 3) n-doped small molecules and polymers. Much efforts have been seen in the modification of known building blocks, development of novel building blocks, and optimizaiton of materials processing and device structures. These efforst have resulted in the achievement of record high electron mobilities for both small molecules (12.6 cm²V-1s-1) and polymers (14.9 cm2V-1s-1), which are approaching the highest hole mobilities achieved by p-type small molecules and polymers so far. In addition, n-doping of ambipolar and p-type organic semiconductors has proven to be an efficienct approach to obtaining a greater number of n-type organic semiconductors. However, it is found that n-type organic semicondcutors, in general, still lag behind p-type organic semiconductors in terms of carrier mobility and air stability. Further exploration of new building blocks for making novel materials and optimization of processing conditions and device structures are needed to improve the performance, particularly air stability.

中文翻译：

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开发用于有机场效应晶体管的n型有机半导体的最新进展

这篇评论重点介绍了有机半导体作为有机场晶体管（OFET）中电子传输n沟道材料的发展方面的最新重大进展。讨论了三种类型的材料：1）小分子，2）聚合物和3）n掺杂的小分子和聚合物。在已知构件的修改，新型构件的开发以及材料处理和设备结构的优化方面已经看到了很多努力。这些效果使两个小分子（12.6 cm ² V-1s-1）和聚合物（14.9厘米2个伏特-1s-1），这是迄今为止p型小分子和聚合物所能达到的最高空穴迁移率。另外，已经证明双极性和p型有机半导体的n掺杂是获得更多数量的n型有机半导体的有效方法。然而，发现在载流子迁移率和空气稳定性方面，通常n型有机半导体仍然落后于p型有机半导体。需要进一步探索用于制造新颖材料的新型构件以及优化加工条件和装置结构，以改善性能，尤其是空气稳定性。