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Thermally Stable Sr2RuO4 Electrode for Oxide Heterostructures
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2017-06-13 00:00:00 , DOI: 10.1021/acsami.7b03577 Ryota Takahashi 1, 2 , Mikk Lippmaa 1
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2017-06-13 00:00:00 , DOI: 10.1021/acsami.7b03577 Ryota Takahashi 1, 2 , Mikk Lippmaa 1
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The use of thermally stable Sr2RuO4 electrodes in high-temperature synthesis of oxide heterostructures was investigated. Atomically smooth Sr2RuO4 thin films were grown on SrTiO3(001) substrates by pulsed laser deposition and used as a bottom electrode for ferroelectric BaTiO3 capacitors grown at temperatures of up to 1000 °C. The thermal stability of Sr2RuO4 electrodes was verified by structural and electrical measurements of the ferroelectric BaTiO3 films. The best growth temperature for the BaTiO3 films was found to be 900 °C, exhibiting the largest spontaneous polarization, dielectric constant, and pyroelectric response. We conclude that Sr2RuO4 films are suitable for use as thermally stable electrodes in heterostructures synthesized at temperatures up to at least 1000 °C and oxygen pressures from 10–6 to 10–1 Torr. This range of growth film conditions is much wider than that for other common oxide electrode materials such as SrRuO3, widening the available process window for optimizing the performance of oxide electronic devices.
中文翻译：
用于氧化物异质结构的热稳定Sr 2 RuO 4电极
研究了热稳定的Sr 2 RuO 4电极在高温合成氧化物异质结构中的应用。通过脉冲激光沉积在SrTiO 3（001）衬底上生长原子光滑的Sr 2 RuO 4薄膜，并用作在高达1000°C的温度下生长的铁电BaTiO 3电容器的底部电极。Sr 2 RuO 4电极的热稳定性通过铁电BaTiO 3膜的结构和电学测量得到验证。BaTiO 3的最佳生长温度发现薄膜的温度为900°C，表现出最大的自发极化，介电常数和热电响应。我们得出的结论是，Sr 2 RuO 4膜适用于在至少高达1000°C的温度和10 –6至10 –1托的氧气压力下合成的异质结构中的热稳定电极。该生长膜条件的范围比其他常见的氧化物电极材料（例如SrRuO 3）的范围要宽得多，从而扩大了可用于优化氧化物电子器件性能的可用工艺窗口。
更新日期：2017-06-28
中文翻译：
用于氧化物异质结构的热稳定Sr 2 RuO 4电极
研究了热稳定的Sr 2 RuO 4电极在高温合成氧化物异质结构中的应用。通过脉冲激光沉积在SrTiO 3（001）衬底上生长原子光滑的Sr 2 RuO 4薄膜，并用作在高达1000°C的温度下生长的铁电BaTiO 3电容器的底部电极。Sr 2 RuO 4电极的热稳定性通过铁电BaTiO 3膜的结构和电学测量得到验证。BaTiO 3的最佳生长温度发现薄膜的温度为900°C，表现出最大的自发极化，介电常数和热电响应。我们得出的结论是，Sr 2 RuO 4膜适用于在至少高达1000°C的温度和10 –6至10 –1托的氧气压力下合成的异质结构中的热稳定电极。该生长膜条件的范围比其他常见的氧化物电极材料（例如SrRuO 3）的范围要宽得多，从而扩大了可用于优化氧化物电子器件性能的可用工艺窗口。
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