当前位置: X-MOL 学术ACS Appl. Mater. Interfaces › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Minimizing Isolate Catalyst Motion in Metal-Assisted Chemical Etching for Deep Trenching of Silicon Nanohole Array
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2017-05-23 00:00:00 , DOI: 10.1021/acsami.7b04565
Lingyu Kong 1, 2, 3 , Yunshan Zhao 3 , Binayak Dasgupta 1, 2 , Yi Ren 2 , Kedar Hippalgaonkar 2 , Xiuling Li 4 , Wai Kin Chim 3 , Sing Yang Chiam 2
Affiliation  

The instability of isolate catalysts during metal-assisted chemical etching is a major hindrance to achieve high aspect ratio structures in the vertical and directional etching of silicon (Si). In this work, we discussed and showed how isolate catalyst motion can be influenced and controlled by the semiconductor doping type and the oxidant concentration ratio. We propose that the triggering event in deviating isolate catalyst motion is brought about by unequal etch rates across the isolate catalyst. This triggering event is indirectly affected by the oxidant concentration ratio through the etching rates. While the triggering events are stochastic, the doping concentration of silicon offers a good control in minimizing isolate catalyst motion. The doping concentration affects the porosity at the etching front, and this directly affects the van der Waals (vdWs) forces between the metal catalyst and Si during etching. A reduction in the vdWs forces resulted in a lower bending torque that can prevent the straying of the isolate catalyst from its directional etching, in the event of unequal etch rates. The key understandings in isolate catalyst motion derived from this work allowed us to demonstrate the fabrication of large area and uniformly ordered sub-500 nm nanoholes array with an unprecedented high aspect ratio of ∼12.

中文翻译:

在金属辅助化学刻蚀中对硅纳米孔阵列的深沟槽进行最小化孤立催化剂运动

在金属辅助化学蚀刻过程中,隔离催化剂的不稳定性是在硅(Si)的垂直和方向蚀刻中获得高纵横比结构的主要障碍。在这项工作中,我们讨论并展示了隔离催化剂的运动如何受到半导体掺杂类型和氧化剂浓度比的影响和控制。我们提出偏离隔离物催化剂运动的触发事件是由横跨隔离物催化剂的不相等的蚀刻速率引起的。通过蚀刻速率,该触发事件间接受到氧化剂浓度比的影响。尽管触发事件是随机的,但硅的掺杂浓度可以很好地控制隔离催化剂的运动。掺杂浓度会影响蚀刻前端的孔隙率,这直接影响蚀刻过程中金属催化剂和Si之间的范德华力(vdWs)。vdWs力的减小导致较低的弯曲扭矩,在蚀刻速率不相等的情况下,该弯曲扭矩可以防止隔离催化剂因其定向蚀刻而散乱。从这项工作中获得的分离催化剂运动的关键理解,使我们能够证明以前所未有的高长宽比约为12的大面积,均匀有序的亚500 nm纳米孔阵列的制造。
更新日期:2017-06-09
down
wechat
bug