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Local Enhancement of Polarization at PbTiO3/BiFeO3 Interfaces Mediated by Charge Transfer
Nano Letters ( IF 9.6 ) Pub Date : 2017-05-25 00:00:00 , DOI: 10.1021/acs.nanolett.7b00788 Ying Liu , Yin-Lian Zhu , Yun-Long Tang , Yu-Jia Wang , Yi-Xiao Jiang , Yao-Bin Xu , Bin Zhang , Xiu-Liang Ma 1
Nano Letters ( IF 9.6 ) Pub Date : 2017-05-25 00:00:00 , DOI: 10.1021/acs.nanolett.7b00788 Ying Liu , Yin-Lian Zhu , Yun-Long Tang , Yu-Jia Wang , Yi-Xiao Jiang , Yao-Bin Xu , Bin Zhang , Xiu-Liang Ma 1
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Ferroelectrics hold promise for sensors, transducers, and telecommunications. With the demand of electronic devices scaling down, they take the form of nanoscale films. However, the polarizations in ultrathin ferroelectric films are usually reduced dramatically due to the depolarization field caused by incomplete charge screening at interfaces, hampering the integrations of ferroelectrics into electric devices. Here, we design and fabricate a ferroelectric/multiferroic PbTiO3/BiFeO3 system, which exhibits discontinuities in both chemical valence and ferroelectric polarization across the interface. Aberration-corrected scanning transmission electron microscopic study reveals an 8% elongation of out-of-plane lattice spacing associated with 104%, 107%, and 39% increments of δTi, δO1, and δO2 in the PbTiO3 layer near the head-to-tail polarized interface, suggesting an over ∼70% enhancement of polarization compared with that of bulk PbTiO3. Besides that in PbTiO3, polarization in the BiFeO3 is also remarkably enhanced. Electron energy loss spectrum and X-ray photoelectron spectroscopy investigations demonstrate the oxygen vacancy accumulation as well as the transfer of Fe3+ to Fe2+ at the interface. On the basis of the polar catastrophe model, FeO2/PbO interface is determined. First-principles calculation manifests that the oxygen vacancy at the interface plays a predominate role in inducing the local polarization enhancement. We propose a charge transfer mechanism that leads to the remarkable polarization increment at the PbTiO3/BiFeO3 interface. This study may facilitate the development of nanoscale ferroelectric devices by tailing the coupling of charge and lattice in oxide heteroepitaxy.
中文翻译：
电荷转移介导的PbTiO 3 / BiFeO 3界面极化的局部增强
铁电器件有望在传感器，传感器和电信领域得到应用。随着电子设备需求的缩减，它们采取了纳米级薄膜的形式。但是，超薄铁电薄膜中的极化通常会由于界面处电荷筛选不完全引起的去极化场而大大降低，从而妨碍了铁电体集成到电子设备中。在这里，我们设计并制造了铁电/多铁PbTiO 3 / BiFeO 3系统，该系统在界面上的化学价和铁电极化均不连续。像差校正的扫描透射电子显微镜研究表明，平面外晶格间距的伸长率为8％，与δ的104％，107％和39％的增量有关钛，δ O1，和δ O2在的PbTiO 3层头部-尾偏振界面附近，这表明极化的超过约70％的增强与本体的PbTiO的相比，3。除了PbTiO 3中的BiFeO 3以外，BiFeO 3中的极化也显着增强。电子能量损失谱和X射线光电子能谱研究表明，氧空位积累以及界面处Fe 3+向Fe 2+的转移。在极地灾难模型FeO 2的基础上/ PbO接口已确定。第一性原理计算表明，界面处的氧空位在引起局部极化增强中起主要作用。我们提出了一种电荷转移机制，该机制导致PbTiO 3 / BiFeO 3界面处的极化显着增加。这项研究可能会拖尾氧化物异质外延中电荷和晶格的耦合，从而促进纳米级铁电器件的开发。
更新日期：2017-06-01
中文翻译：
电荷转移介导的PbTiO 3 / BiFeO 3界面极化的局部增强
铁电器件有望在传感器，传感器和电信领域得到应用。随着电子设备需求的缩减，它们采取了纳米级薄膜的形式。但是，超薄铁电薄膜中的极化通常会由于界面处电荷筛选不完全引起的去极化场而大大降低，从而妨碍了铁电体集成到电子设备中。在这里，我们设计并制造了铁电/多铁PbTiO 3 / BiFeO 3系统，该系统在界面上的化学价和铁电极化均不连续。像差校正的扫描透射电子显微镜研究表明，平面外晶格间距的伸长率为8％，与δ的104％，107％和39％的增量有关钛，δ O1，和δ O2在的PbTiO 3层头部-尾偏振界面附近，这表明极化的超过约70％的增强与本体的PbTiO的相比，3。除了PbTiO 3中的BiFeO 3以外，BiFeO 3中的极化也显着增强。电子能量损失谱和X射线光电子能谱研究表明，氧空位积累以及界面处Fe 3+向Fe 2+的转移。在极地灾难模型FeO 2的基础上/ PbO接口已确定。第一性原理计算表明，界面处的氧空位在引起局部极化增强中起主要作用。我们提出了一种电荷转移机制，该机制导致PbTiO 3 / BiFeO 3界面处的极化显着增加。这项研究可能会拖尾氧化物异质外延中电荷和晶格的耦合，从而促进纳米级铁电器件的开发。
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