We report the structure and electron field emission properties of ion beam reduced graphene oxide (GO). 500 keV Ar⁺ ion beam was used to reduce the GO, synthesized by modified Hummer’s method. X-ray photoelectron spectroscopy and Resonant Rutherford backscattering spectrometric analyses evidenced that the oxygen functional groups drastically reduced upon irradiation. Further, the ion beam reduced GO exhibits enhanced electron field emission property. The exponential reduction of oxygen concentration is correlated with the field enhancement factor. Raman studies shows that ion irradiation process does not introduced any additional defects in GO. Scanning electron microscopic analysis reveals layered structure of GO sheets upon ion irradiation. Our investigation demonstrated that ion beam irradiation of GO yields a highly enhanced field emission with low turn-on voltage without deteriorating its structure.

中文翻译：

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离子束还原氧化石墨烯片的结构和电子发射特性

我们报告了离子束还原氧化石墨烯（GO）的结构和电子场发射特性。500 keV氩气⁺用改进的悍马方法合成的离子束用于还原GO。X射线光电子能谱和共振卢瑟福背散射光谱分析表明，氧官能团在辐照后急剧减少。此外，离子束还原的GO表现出增强的电子场发射性质。氧浓度的指数下降与场增强因子相关。拉曼研究表明，离子辐照工艺不会在GO中引入任何其他缺陷。扫描电子显微镜分析揭示了在离子辐照下GO片的层状结构。我们的研究表明，GO的离子束辐照可在不降低其结构恶化的情况下，以较低的导通电压产生高度增强的场发射。