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A pH-UV Dual-Responsive Photoresist for Nanoimprint Lithography That Improves Mold Release
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2017-05-15 00:00:00 , DOI: 10.1021/acs.jpcc.7b02117
Chengyang Zhao 1 , Chenchen Shao 1 , Xiaowei Yu 1 , Dian Yang 2 , Jie Wei 1, 3
Affiliation  

We have developed a degradable photoresist that is responsive to pH and ultraviolet light (UV). This dual-responsive resist consists of 5,7-diacryloyloxy-4-methylcoumarin (fluorescent monomer), acrylic anhydride, and 3,6-dioxa-1,8-dithiooctane. It can be photocured using thiol–acrylate polymerization and photodimerization of coumarin moieties under 365 nm UV light exposure. The cured resist is degradable in aqueous solutions with pH > 7. The degradation process can be characterized by the change of fluorescence intensity in the aqueous solution. In this study, we have analyzed the properties of the degradation of the resist by changing the pH of the solution and its exposure time under 254 nm UV light. This UV exposure can induce photocleavage of the coumarin dimers. We then used these materials to fabricate micropatterns through nanoimprint lithography (NIL) process. Compared with other conventional degradable materials capable of NIL, the dual-responsive resist can help to clean the NIL mold easily at room temperature. This resist is also more environmentally friendly, is relatively low cost, can be faster to degrade, and is easier to characterize. It also has low volume shrinkage, which may have a valuable and positive effect on the development of NIL.

中文翻译:

用于纳米压印光刻的pH-UV双响应光刻胶,可改善脱模性

我们已经开发了一种可降解的光刻胶,该光刻胶可响应pH和紫外线(UV)。这种双响应型抗蚀剂由5,7-二丙烯酰氧基-4-甲基香豆素(荧光单体),丙烯酸酐和3,6-二氧杂-1,8-二硫辛烷组成。可以在365 nm紫外线下使用巯基丙烯酸酯聚合和香豆素部分进行光二聚反应进行光固化。固化的抗蚀剂可在pH> 7的水溶液中降解。降解过程的特征在于水溶液中荧光强度的变化。在这项研究中,我们通过改变溶液的pH值及其在254 nm紫外线下的曝光时间来分析抗蚀剂降解的特性。这种紫外线暴露可以诱导香豆素二聚体的光裂解。然后,我们使用这些材料通过纳米压印光刻(NIL)工艺制造微图案。与其他具有NIL功能的常规可降解材料相比,双响应抗蚀剂可帮助在室温下轻松清洁NIL模具。该抗蚀剂还更环保,成本相对较低,可以更快地降解,并且更容易表征。它的体积收缩率也低,这可能对NIL的发展产生有价值的积极影响。
更新日期:2017-05-24
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