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Photothermal Effect Induced Negative Photoconductivity and High Responsivity in Flexible Black Phosphorus Transistors
ACS Nano ( IF 15.8 ) Pub Date : 2017-05-11 00:00:00 , DOI: 10.1021/acsnano.7b01999 Jinshui Miao 1 , Bo Song 1 , Qing Li 2 , Le Cai 1 , Suoming Zhang 1 , Weida Hu 2 , Lixin Dong 1 , Chuan Wang 1
ACS Nano ( IF 15.8 ) Pub Date : 2017-05-11 00:00:00 , DOI: 10.1021/acsnano.7b01999 Jinshui Miao 1 , Bo Song 1 , Qing Li 2 , Le Cai 1 , Suoming Zhang 1 , Weida Hu 2 , Lixin Dong 1 , Chuan Wang 1
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This paper reports negative photoconductivity mechanism in flexible black phosphorus (BP) transistors built on freestanding polyimide film. Near-infrared laser (λ = 830 nm) excitation leads to significantly suppressed device on-state current with a very high responsivity of up to 53 A/W. The underlying mechanism of the negative photoconductivity is attributed to the strong photothermal effect induced by the low thermal conductivity of the polyimide substrate used. The heat generated by the infrared light illumination results in enhanced phonon scattering, reduced carrier mobility, and consequently negative photocurrent. Such a phenomenon was not observed in similar BP devices built on SiO2/Si substrates whose thermal conductivity is much higher. The above photothermal mechanism is also supported by temperature-dependent electrical characterization and device simulation. Such a flexible BP infrared photodetector with ultrahigh responsivity may find potential applications in future wearable and biointegrated imaging systems.
中文翻译：
光热效应引起柔性黑色磷晶体管的负光电导和高响应性
本文报道了在独立式聚酰亚胺薄膜上构建的柔性黑磷（BP）晶体管的负光电导机理。近红外激光（λ= 830 nm）激发可显着抑制器件导通电流，并具有高达53 A / W的极高响应度。负光电导性的基本机理归因于所用聚酰亚胺基材的低导热性引起的强光热效应。红外光照明产生的热量导致声子散射增强，载流子迁移率降低，并因此产生负光电流。在基于SiO 2的类似BP装置中未观察到这种现象/ Si基板的热导率要高得多。依赖于温度的电特性和器件仿真也支持上述光热机理。这种具有超高响应度的柔性BP红外光电探测器可能会在未来的可穿戴和生物集成成像系统中找到潜在的应用。
更新日期：2017-05-18
中文翻译：
光热效应引起柔性黑色磷晶体管的负光电导和高响应性
本文报道了在独立式聚酰亚胺薄膜上构建的柔性黑磷（BP）晶体管的负光电导机理。近红外激光（λ= 830 nm）激发可显着抑制器件导通电流，并具有高达53 A / W的极高响应度。负光电导性的基本机理归因于所用聚酰亚胺基材的低导热性引起的强光热效应。红外光照明产生的热量导致声子散射增强，载流子迁移率降低，并因此产生负光电流。在基于SiO 2的类似BP装置中未观察到这种现象/ Si基板的热导率要高得多。依赖于温度的电特性和器件仿真也支持上述光热机理。这种具有超高响应度的柔性BP红外光电探测器可能会在未来的可穿戴和生物集成成像系统中找到潜在的应用。
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