Electrochemical Liquid Phase Epitaxy (ec-LPE): A New Methodology for the Synthesis of Crystalline Group IV Semiconductor Epifilms,Journal of the American Chemical Society

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Electrochemical Liquid Phase Epitaxy (ec-LPE): A New Methodology for the Synthesis of Crystalline Group IV Semiconductor Epifilms
Journal of the American Chemical Society ( IF 14.4 ) Pub Date : 2017-05-09 , DOI: 10.1021/jacs.7b01968
Joshua Demuth ₁ , Eli Fahrenkrug ₁ , Luyao Ma ₁ , Titilayo Shodiya ₁ , Julia I. Deitz ₂ , Tyler J. Grassman ₂ , Stephen Maldonado _{1,

3}

Affiliation

Deposition of epitaxial germanium (Ge) thin films on silicon (Si) wafers has been achieved over large areas with aqueous feedstock solutions using electrochemical liquid phase epitaxy (ec-LPE) at low temperatures (T ≤ 90 °C). The ec-LPE method uniquely blends the simplicity and control of traditional electrodeposition with the material quality of melt growth. A new electrochemical cell design based on the compression of a liquid metal electrode into a thin cavity that enables ec-LPE is described. The epitaxial nature, low strain character, and crystallographic defect content of the resultant solid Ge films were analyzed by electron backscatter diffraction, scanning transmission electron microscopy, high resolution X-ray diffraction, and electron channeling contrast imaging. The results here show the first step toward a manufacturing infrastructure for traditional crystalline inorganic semiconductor epifilms that does not require high temperature, gaseous precursors, or complex apparatus.

中文翻译：

电化学液相外延 (ec-LPE)：一种合成晶体 IV 族半导体外延膜的新方法

使用电化学液相外延 (ec-LPE) 在低温 (T ≤ 90 °C) 下，使用水性原料溶液在硅 (Si) 晶片上实现了外延锗 (Ge) 薄膜的大面积沉积。ec-LPE 方法独特地将传统电沉积的简单性和控制与熔体生长的材料质量相结合。描述了一种新的电化学电池设计，该设计基于将液态金属电极压缩到使 ec-LPE 能够实现的薄腔中。通过电子背散射衍射、扫描透射电子显微镜、高分辨率 X 射线衍射和电子沟道对比成像分析所得固体 Ge 薄膜的外延性质、低应变特性和晶体缺陷含量。

更新日期：2017-05-09

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