Tuning Phase Transitions in 1T-TaS2 via the Substrate,Nano Letters

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Tuning Phase Transitions in 1T-TaS2 via the Substrate
Nano Letters ( IF 9.6 ) Pub Date : 2017-05-02 00:00:00 , DOI: 10.1021/acs.nanolett.7b00418
Rui Zhao , Yi Wang , Donna Deng , Xuan Luo , Wen Jian Lu , Yu-Ping Sun ₁ , Zi-Kui Liu , Long-Qing Chen , Joshua Robinson

Affiliation

Phase transitions in 2D materials can lead to massive changes in electronic properties that enable novel electronic devices. Tantalum disulfide (TaS₂), specifically the “1T” phase (1T-TaS₂), exhibits a phase transition based on the formation of commensurate charge density waves (CCDW) at 180 K. In this work, we investigate the impact of substrate choice on the phase transitions in ultrathin 1T-TaS₂. Doping and charge transfer from the substrate has little impact on CDW phase transitions. On the contrary, we demonstrated that substrate surface roughness is a primary extrinsic factor in CCDW transition temperature and hysteresis, where higher roughness leads to smaller transition hysteresis. Such roughness can be simulated via surface texturing of SiO₂/Si substrates, which controllably and reproducibly induces periodic strain in the 1T-TaS₂ and thereby enables the potential for engineering CDW phase transitions.

中文翻译：

通过基板调整1T-TaS _2中的相变

2D材料中的相变会导致电子性能发生巨大变化，从而使新型电子设备成为可能。二硫化钽（TaS ₂），特别是“ 1T”相（1T-TaS ₂），在180 K时基于相称电荷密度波（CCDW）的形成表现出相变。在这项工作中，我们研究了衬底的影响超薄1T-TaS ₂的相变选择。来自衬底的掺杂和电荷转移对CDW相变几乎没有影响。相反，我们证明了基板表面粗糙度是CCDW过渡温度和磁滞的主要外在因素，其中较高的粗糙度导致较小的过渡磁滞。可以通过SiO的表面纹理化来模拟这种粗糙度₂ / Si基板，可控和可复制地在1T-TaS _2中引起周期性应变，从而实现了CDW相变工程的潜力。

更新日期：2017-05-06

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