State Key Laboratory of Functional Materials for Informatics; Shanghai Institute of Microsystem and Information Technology; Chinese Academy of Sciences; 865 Changning Road Shanghai 200050 P. R. China
Department of Physics and State Key Laboratory of Surface Physics; Fudan University; Shanghai 200433 China
Center of Electron Microscopy and State Key Laboratory of Silicon Materials; School of Materials Science and Engineering; Zhejiang University; Hangzhou 310027 P. R. China
School of Physical Science and Technology; Shanghai Tech University; Shanghai 200031 P. R. China
Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices; Institute of Functional Nano and Soft Materials (FUNSOM); Soochow University; Suzhou 215123 P. R. China
Department of Materials Science and Engineering; Technion; Israel Institute of Technology; Haifa 3200003 Israel
A new 2D crystalline tunable‐narrow‐bandgap (0.39 eV) semiconductor, C3N, is developed for the first time, as reported by Guqiao Ding, Xiaoming Xie, Shuit‐Tong Lee, Zhenhui Kang, and co‐workers in article number 1605625. The bandgap tuning (2.74–1.57 eV) of C3N quantum dots is implemented by varying their size. Back‐gated field‐effect transistors made of single‐layer C3N show an average ION/IOFF current ratio of 5.5 × 1010. Strikingly, hydrogenated C3N (C3NH0.125) shows spontaneous magnetism.
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