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Intervalley scattering by acoustic phonons in two-dimensional MoS2 revealed by double-resonance Raman spectroscopy.
Nature Communications ( IF 14.7 ) Pub Date : 2017-03-09 , DOI: 10.1038/ncomms14670
Bruno R Carvalho 1 , Yuanxi Wang 2 , Sandro Mignuzzi 3, 4 , Debdulal Roy 3, 4 , Mauricio Terrones 2, 5, 6 , Cristiano Fantini 1 , Vincent H Crespi 2 , Leandro M Malard 1 , Marcos A Pimenta 1
Affiliation  

Double-resonance Raman scattering is a sensitive probe to study the electron-phonon scattering pathways in crystals. For semiconducting two-dimensional transition-metal dichalcogenides, the double-resonance Raman process involves different valleys and phonons in the Brillouin zone, and it has not yet been fully understood. Here we present a multiple energy excitation Raman study in conjunction with density functional theory calculations that unveil the double-resonance Raman scattering process in monolayer and bulk MoS2. Results show that the frequency of some Raman features shifts when changing the excitation energy, and first-principle simulations confirm that such bands arise from distinct acoustic phonons, connecting different valley states. The double-resonance Raman process is affected by the indirect-to-direct bandgap transition, and a comparison of results in monolayer and bulk allows the assignment of each Raman feature near the M or K points of the Brillouin zone. Our work highlights the underlying physics of intervalley scattering of electrons by acoustic phonons, which is essential for valley depolarization in MoS2.

中文翻译:


双共振拉曼光谱揭示了二维 MoS2 中声学声子的谷间散射。



双共振拉曼散射是研究晶体中电子-声子散射路径的灵敏探针。对于半导体二维过渡金属二硫属化物,双共振拉曼过程涉及布里渊区的不同谷和声子,目前尚未完全了解。在这里,我们提出了结合密度泛函理论计算的多能量激发拉曼研究,揭示了单层和块状 MoS 2中的双共振拉曼散射过程。结果表明,当改变激发能量时,一些拉曼特征的频率会发生变化,第一原理模拟证实这些频带来自不同的声学声子,连接不同的谷态。双共振拉曼过程受到间接到直接带隙跃迁的影响,单层和块体结果的比较允许在布里渊区的 M 或 K 点附近分配每个拉曼特征。我们的工作强调了声声子对电子进行层间散射的基本物理原理,这对于 MoS 2中的谷去极化至关重要。
更新日期:2017-03-11
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