All Inkjet-Printed Metal-Oxide Thin-Film Transistor Array with Good Stability and Uniformity Using Surface-Energy Patterns,ACS Applied Materials & Interfaces

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All Inkjet-Printed Metal-Oxide Thin-Film Transistor Array with Good Stability and Uniformity Using Surface-Energy Patterns
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2017-02-23 00:00:00 , DOI: 10.1021/acsami.7b00435
Yuzhi Li ₁ , Linfeng Lan ₁ , Sheng Sun ₁ , Zhenguo Lin ₁ , Peixiong Gao ₁ , Wei Song ₁ , Erlong Song ₁ , Peng Zhang ₁ , Junbiao Peng ₁

Affiliation

An array of inkjet-printed metal-oxide thin-film transistors (TFTs) is demonstrated for the first time with the assistance of surface-energy patterns prepared by printing pure solvent to etch the ultrathin hydrophobic layer. The surface-energy patterns not only restrained the spreading of inks but also provided a facile way to regulate the morphology of metal oxide films without optimizing ink formulation. The fully printed InGaO TFT devices in the array exhibited excellent electron transport characteristics with a maximum mobility of 11.7 cm² V^–1 s^–1, negligible hysteresis, good uniformity, and good stability under bias stress. The new route lights a general way toward fully inkjet-printed metal-oxide TFT arrays.

中文翻译：

使用表面能图案的所有喷墨印刷的金属氧化物薄膜晶体管阵列，具有良好的稳定性和均匀性

首次展示了喷墨印刷的金属氧化物薄膜晶体管（TFT）阵列，借助通过印刷纯溶剂以蚀刻超薄疏水层而制备的表面能图案。表面能图案不仅限制了油墨的扩散，而且提供了一种无需优化油墨配方即可调节金属氧化物膜形态的简便方法。阵列中完整印刷的InGaO TFT器件表现出出色的电子传输特性，最大迁移率为11.7 cm ² V ^–1 s ^–1，磁滞可忽略不计，均匀性好，在偏压下具有良好的稳定性。新路线为通向完全喷墨印刷的金属氧化物TFT阵列的一般方式开了灯。

更新日期：2017-02-23

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