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Oxide Semiconductor Phototransistor with Organolead Trihalide Perovskite Light Absorber
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2017-02-24 , DOI: 10.1002/aelm.201600325 Songnan Du 1 , Gongtan Li 2 , Xuhong Cao 2 , Yan Wang 1 , Huiling Lu 1 , Shengdong Zhang 1 , Chuan Liu 2 , Hang Zhou 1
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2017-02-24 , DOI: 10.1002/aelm.201600325 Songnan Du 1 , Gongtan Li 2 , Xuhong Cao 2 , Yan Wang 1 , Huiling Lu 1 , Shengdong Zhang 1 , Chuan Liu 2 , Hang Zhou 1
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A hybrid phototransistor is developed with solution‐processed organolead trihalide perovskite (MAPbI3) capping indium gallium zinc oxide (IGZO), which well fuses the properties of the two materials in sensitive photodetecting and high‐mobility charge transporting, respectively. The MAPbI3‐capped IGZO phototransistor demonstrates excellent responsivities of over 25 mA W−1 for lights with photon energies above the bandgap of perovskite light absorber. Besides the high sensitivity to light in both ultraviolet and visible regions, hybrid phototransistor maintains a fair on/off ratio of over 106 in the dark, and a field effect mobility of 12.9 cm2 V−1 s−1. The perovskite light absorber also obviates the long‐standing problem for metal oxide phototransistor, the persistent photoconductivity behavior. Furthermore, fast transient response has been achieved by showing rise‐time and fall‐time within tens of milliseconds. The newly developed device opens variable optic‐electric sensing applications for the integrated oxide–perovskite hybrid phototransistors.
中文翻译：
带有有机油酸酯三卤化物钙钛矿光吸收剂的氧化物半导体光电晶体管
开发了一种混合光电晶体管，其溶液加工过的有机铅三卤化钙钛矿（MAPbI 3）覆盖了铟镓锌氧化物（IGZO），可以很好地融合两种材料的特性，分别用于灵敏的光电检测和高迁移率的电荷传输。MAPbI 3封口的IGZO光电晶体管对光子能量高于钙钛矿光吸收带隙的光显示出超过25 mA W -1的出色响应性。除了在紫外和可见光区域对光具有高灵敏度之外，混合光电晶体管在黑暗中还保持了超过10 6的合理开/关比，场效应迁移率达12.9 cm 2 V -1 s -1。钙钛矿光吸收剂还消除了金属氧化物光电晶体管长期存在的问题，即持久的光电导行为。此外，通过在数十毫秒内显示上升时间和下降时间，可以实现快速的瞬态响应。新开发的设备为集成的氧化物-钙钛矿混合光电晶体管打开了可变光电传感应用。
更新日期：2017-02-24
中文翻译：
带有有机油酸酯三卤化物钙钛矿光吸收剂的氧化物半导体光电晶体管
开发了一种混合光电晶体管，其溶液加工过的有机铅三卤化钙钛矿（MAPbI 3）覆盖了铟镓锌氧化物（IGZO），可以很好地融合两种材料的特性，分别用于灵敏的光电检测和高迁移率的电荷传输。MAPbI 3封口的IGZO光电晶体管对光子能量高于钙钛矿光吸收带隙的光显示出超过25 mA W -1的出色响应性。除了在紫外和可见光区域对光具有高灵敏度之外，混合光电晶体管在黑暗中还保持了超过10 6的合理开/关比，场效应迁移率达12.9 cm 2 V -1 s -1。钙钛矿光吸收剂还消除了金属氧化物光电晶体管长期存在的问题，即持久的光电导行为。此外，通过在数十毫秒内显示上升时间和下降时间，可以实现快速的瞬态响应。新开发的设备为集成的氧化物-钙钛矿混合光电晶体管打开了可变光电传感应用。
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