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Ultrabroadband MoS2 Photodetector with Spectral Response from 445 to 2717 nm
Advanced Materials ( IF 27.4 ) Pub Date : 2017-02-23 , DOI: 10.1002/adma.201605972 Ying Xie 1 , Bo Zhang 1 , Shuxian Wang 1 , Dong Wang 2 , Aizhu Wang 2 , Zeyan Wang 1 , Haohai Yu 1 , Huaijin Zhang 1 , Yanxue Chen 2 , Mingwen Zhao 2 , Baibiao Huang 1 , Liangmo Mei 2 , Jiyang Wang 1
Advanced Materials ( IF 27.4 ) Pub Date : 2017-02-23 , DOI: 10.1002/adma.201605972 Ying Xie 1 , Bo Zhang 1 , Shuxian Wang 1 , Dong Wang 2 , Aizhu Wang 2 , Zeyan Wang 1 , Haohai Yu 1 , Huaijin Zhang 1 , Yanxue Chen 2 , Mingwen Zhao 2 , Baibiao Huang 1 , Liangmo Mei 2 , Jiyang Wang 1
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Photodetectors with excellent detecting properties over a broad spectral range have advantages for the application in many optoelectronic devices. Introducing imperfections to the atomic lattices in semiconductors is a significant way for tuning the bandgap and achieving broadband response, but the imperfection may renovate their intrinsic properties far from the desire. Here, by controlling the deviation from the perfection of the atomic lattice, ultrabroadband multilayer MoS2 photodetectors are originally designed and realized with the detection range over 2000 nm from 445 nm (blue) to 2717 nm (mid‐infrared). Associated with the narrow but nonzero bandgap and large photoresponsivity, the optimized deviation from the perfection of MoS2 samples is theoretically found and experimentally achieved aiming at the ultrabroadband photoresponse. By the photodetection characterization, the responsivity and detectivity of the present photodetectors are investigated in the wavelength range from 445 to 2717 nm with the maximum values of 50.7 mA W−1 and 1.55 × 109 Jones, respectively, which represent the most broadband MoS2 photodetectors. Based on the easy manipulation, low cost, large scale, and broadband photoresponse, this present detector has significant potential for the applications in optoelectronics and electronics in the future.
中文翻译：
具有445至2717 nm光谱响应的超宽带MoS2光电探测器
在广泛的光谱范围内具有出色检测性能的光电检测器在许多光电设备中的应用具有优势。向半导体中的原子晶格引入不完美之处是调节带隙和实现宽带响应的一种重要方法，但是不完美之处可能会彻底改变其内在特性。在这里，通过控制偏离原子晶格完善性的方法，最初设计并实现了超宽带多层MoS 2光电探测器，其探测范围从445 nm（蓝色）到2717 nm（中红外）超过2000 nm。与窄但非零的带隙和较大的光响应性相关，与偏离MoS 2的最佳化的最佳偏差从理论上发现了样品，并针对超宽带光响应实验性地获得了样品。通过光电检测特性，研究了本光电检测器在445至2717 nm波长范围内的响应度和检测率，其最大值分别为50.7 mA W -1和1.55×10 9 Jones，代表了最宽的MoS 2光电探测器。基于易于操作，低成本，大规模和宽带光响应的特点，该检测器具有未来在光电子学和电子学中的应用的巨大潜力。
更新日期：2017-02-23
中文翻译：
具有445至2717 nm光谱响应的超宽带MoS2光电探测器
在广泛的光谱范围内具有出色检测性能的光电检测器在许多光电设备中的应用具有优势。向半导体中的原子晶格引入不完美之处是调节带隙和实现宽带响应的一种重要方法，但是不完美之处可能会彻底改变其内在特性。在这里，通过控制偏离原子晶格完善性的方法，最初设计并实现了超宽带多层MoS 2光电探测器，其探测范围从445 nm（蓝色）到2717 nm（中红外）超过2000 nm。与窄但非零的带隙和较大的光响应性相关，与偏离MoS 2的最佳化的最佳偏差从理论上发现了样品，并针对超宽带光响应实验性地获得了样品。通过光电检测特性，研究了本光电检测器在445至2717 nm波长范围内的响应度和检测率，其最大值分别为50.7 mA W -1和1.55×10 9 Jones，代表了最宽的MoS 2光电探测器。基于易于操作，低成本，大规模和宽带光响应的特点，该检测器具有未来在光电子学和电子学中的应用的巨大潜力。
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